Research Progress of Photoanodes for Quantum Dot Sensitized Solar Cells

This paper presents the development status and tendency of quantum dot sensitized solar cells. Photoanode research progress and its related technologies are analyzed in detail from the three ways of semiconductor thin films, quantum dot co-sensitization and quantum dot doping, deriving from the appr...

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Main Authors: LI Zhi-min, LI Zhao-ying, ZHANG Mao-lin, WANG Yuan, HUANG Yun-xia
Format: Article
Language:zho
Published: Journal of Materials Engineering 2017-08-01
Series:Cailiao gongcheng
Subjects:
Online Access:http://jme.biam.ac.cn/CN/Y2017/V45/I8/132
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author LI Zhi-min
LI Zhao-ying
ZHANG Mao-lin
WANG Yuan
HUANG Yun-xia
author_facet LI Zhi-min
LI Zhao-ying
ZHANG Mao-lin
WANG Yuan
HUANG Yun-xia
author_sort LI Zhi-min
collection DOAJ
description This paper presents the development status and tendency of quantum dot sensitized solar cells. Photoanode research progress and its related technologies are analyzed in detail from the three ways of semiconductor thin films, quantum dot co-sensitization and quantum dot doping, deriving from the approach that the conversion efficiency can be improved by photoanode modification for quantum dot sensitized solar cells. According to the key factors which restrict the cell efficiency, the promising future development of quantum dot sensitized solar cells is proposed,for example,optimizing further the compositions and structures of semiconductor thin films for the photoanodes, exploring new quantum dots with broadband absorption and developing high efficient techniques of interface modification.
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spelling doaj.art-1aea56669c5a40baafb93179fac1491a2023-01-03T01:57:55ZzhoJournal of Materials EngineeringCailiao gongcheng1001-43811001-43812017-08-0145813213810.11868/j.issn.1001-4381.2016.001002201708001002Research Progress of Photoanodes for Quantum Dot Sensitized Solar CellsLI Zhi-min0LI Zhao-ying1ZHANG Mao-lin2WANG Yuan3HUANG Yun-xia4School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, ChinaSchool of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, ChinaSchool of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, ChinaSchool of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, ChinaSchool of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, ChinaThis paper presents the development status and tendency of quantum dot sensitized solar cells. Photoanode research progress and its related technologies are analyzed in detail from the three ways of semiconductor thin films, quantum dot co-sensitization and quantum dot doping, deriving from the approach that the conversion efficiency can be improved by photoanode modification for quantum dot sensitized solar cells. According to the key factors which restrict the cell efficiency, the promising future development of quantum dot sensitized solar cells is proposed,for example,optimizing further the compositions and structures of semiconductor thin films for the photoanodes, exploring new quantum dots with broadband absorption and developing high efficient techniques of interface modification.http://jme.biam.ac.cn/CN/Y2017/V45/I8/132solar cellquantum dot sensitizationphotoanodedopingco-sensitization
spellingShingle LI Zhi-min
LI Zhao-ying
ZHANG Mao-lin
WANG Yuan
HUANG Yun-xia
Research Progress of Photoanodes for Quantum Dot Sensitized Solar Cells
Cailiao gongcheng
solar cell
quantum dot sensitization
photoanode
doping
co-sensitization
title Research Progress of Photoanodes for Quantum Dot Sensitized Solar Cells
title_full Research Progress of Photoanodes for Quantum Dot Sensitized Solar Cells
title_fullStr Research Progress of Photoanodes for Quantum Dot Sensitized Solar Cells
title_full_unstemmed Research Progress of Photoanodes for Quantum Dot Sensitized Solar Cells
title_short Research Progress of Photoanodes for Quantum Dot Sensitized Solar Cells
title_sort research progress of photoanodes for quantum dot sensitized solar cells
topic solar cell
quantum dot sensitization
photoanode
doping
co-sensitization
url http://jme.biam.ac.cn/CN/Y2017/V45/I8/132
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