Biasing Voltage Dependence of Sensitivity of Electron Beam Evaporated SnO2 Thin Film CO Sensor

Thin films of tin oxide were deposited by electron beam evaporation. The effectsof the sensor biasing voltage and film thickness on the CO-sensing of tin oxide thin filmswere investigated. The films were characterized using X-ray diffraction and X-rayphotoelectron spectroscopy All the films were fou...

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Main Author: Sardar M. Ayub Durrani
Format: Article
Language:English
Published: MDPI AG 2006-09-01
Series:Sensors
Subjects:
Online Access:http://www.mdpi.com/1424-8220/6/9/1153/
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author Sardar M. Ayub Durrani
author_facet Sardar M. Ayub Durrani
author_sort Sardar M. Ayub Durrani
collection DOAJ
description Thin films of tin oxide were deposited by electron beam evaporation. The effectsof the sensor biasing voltage and film thickness on the CO-sensing of tin oxide thin filmswere investigated. The films were characterized using X-ray diffraction and X-rayphotoelectron spectroscopy All the films were found to be amorphous. The current-voltagecharacteristic of the sensor in air has shown that semiconductor-metal interface formsSchottky barrier. It was found that the CO-sensing properties depend on the sensor biasingvoltage and film thickness. For lower biasing voltages the sensitivity was much higher thanfor the higher voltages. It was found that the sensitivity of the films to CO increased withthe film thickness.
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spelling doaj.art-1b0038f9fe08463ebfeaf151210094382022-12-22T04:00:56ZengMDPI AGSensors1424-82202006-09-01691153116010.3390/s6091153Biasing Voltage Dependence of Sensitivity of Electron Beam Evaporated SnO2 Thin Film CO SensorSardar M. Ayub DurraniThin films of tin oxide were deposited by electron beam evaporation. The effectsof the sensor biasing voltage and film thickness on the CO-sensing of tin oxide thin filmswere investigated. The films were characterized using X-ray diffraction and X-rayphotoelectron spectroscopy All the films were found to be amorphous. The current-voltagecharacteristic of the sensor in air has shown that semiconductor-metal interface formsSchottky barrier. It was found that the CO-sensing properties depend on the sensor biasingvoltage and film thickness. For lower biasing voltages the sensitivity was much higher thanfor the higher voltages. It was found that the sensitivity of the films to CO increased withthe film thickness.http://www.mdpi.com/1424-8220/6/9/1153/Thin filmCO sensorSnO2Semiconductor sensor
spellingShingle Sardar M. Ayub Durrani
Biasing Voltage Dependence of Sensitivity of Electron Beam Evaporated SnO2 Thin Film CO Sensor
Sensors
Thin film
CO sensor
SnO2
Semiconductor sensor
title Biasing Voltage Dependence of Sensitivity of Electron Beam Evaporated SnO2 Thin Film CO Sensor
title_full Biasing Voltage Dependence of Sensitivity of Electron Beam Evaporated SnO2 Thin Film CO Sensor
title_fullStr Biasing Voltage Dependence of Sensitivity of Electron Beam Evaporated SnO2 Thin Film CO Sensor
title_full_unstemmed Biasing Voltage Dependence of Sensitivity of Electron Beam Evaporated SnO2 Thin Film CO Sensor
title_short Biasing Voltage Dependence of Sensitivity of Electron Beam Evaporated SnO2 Thin Film CO Sensor
title_sort biasing voltage dependence of sensitivity of electron beam evaporated sno2 thin film co sensor
topic Thin film
CO sensor
SnO2
Semiconductor sensor
url http://www.mdpi.com/1424-8220/6/9/1153/
work_keys_str_mv AT sardarmayubdurrani biasingvoltagedependenceofsensitivityofelectronbeamevaporatedsno2thinfilmcosensor