Investigation into the Anomalous Temperature Characteristics of InGaN Double Quantum Well Blue Laser Diodes Using Numerical Simulation
Abstract GaN-based blue laser diodes (LDs) may exhibit anomalous temperature characteristics such as a very high characteristic temperature (T 0) or even negative T 0. In this work, temperature-dependent characteristics of GaN-based blue LDs with InGaN double quantum well (QW) structures were invest...
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| Format: | Article |
| Language: | English |
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SpringerOpen
2017-05-01
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| Series: | Nanoscale Research Letters |
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| Online Access: | http://link.springer.com/article/10.1186/s11671-017-2141-6 |
| Summary: | Abstract GaN-based blue laser diodes (LDs) may exhibit anomalous temperature characteristics such as a very high characteristic temperature (T 0) or even negative T 0. In this work, temperature-dependent characteristics of GaN-based blue LDs with InGaN double quantum well (QW) structures were investigated using numerical simulations. The temperature-dependent threshold current is found to become increasingly anomalous as the thickness or doping concentration of the barrier layer between QWs increases. For a properly chosen barrier thickness and doping concentration, very high T 0 of >10,000 K can be obtained. The anomalous temperature characteristics of these InGaN blue LDs are attributed to the increase of gain at the n-side QW with increasing temperature because of the thermally enhanced hole transport from the p-side to the n-side QW. |
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| ISSN: | 1931-7573 1556-276X |