Investigation into the Anomalous Temperature Characteristics of InGaN Double Quantum Well Blue Laser Diodes Using Numerical Simulation
Abstract GaN-based blue laser diodes (LDs) may exhibit anomalous temperature characteristics such as a very high characteristic temperature (T 0) or even negative T 0. In this work, temperature-dependent characteristics of GaN-based blue LDs with InGaN double quantum well (QW) structures were invest...
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| Format: | Article |
| Language: | English |
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SpringerOpen
2017-05-01
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| Series: | Nanoscale Research Letters |
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| Online Access: | http://link.springer.com/article/10.1186/s11671-017-2141-6 |
| _version_ | 1797711975116963840 |
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| author | Han-Youl Ryu |
| author_facet | Han-Youl Ryu |
| author_sort | Han-Youl Ryu |
| collection | DOAJ |
| description | Abstract GaN-based blue laser diodes (LDs) may exhibit anomalous temperature characteristics such as a very high characteristic temperature (T 0) or even negative T 0. In this work, temperature-dependent characteristics of GaN-based blue LDs with InGaN double quantum well (QW) structures were investigated using numerical simulations. The temperature-dependent threshold current is found to become increasingly anomalous as the thickness or doping concentration of the barrier layer between QWs increases. For a properly chosen barrier thickness and doping concentration, very high T 0 of >10,000 K can be obtained. The anomalous temperature characteristics of these InGaN blue LDs are attributed to the increase of gain at the n-side QW with increasing temperature because of the thermally enhanced hole transport from the p-side to the n-side QW. |
| first_indexed | 2024-03-12T07:14:57Z |
| format | Article |
| id | doaj.art-1b248d924023427db6d8bad266755796 |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T07:14:57Z |
| publishDate | 2017-05-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-1b248d924023427db6d8bad2667557962023-09-02T22:50:39ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2017-05-011211710.1186/s11671-017-2141-6Investigation into the Anomalous Temperature Characteristics of InGaN Double Quantum Well Blue Laser Diodes Using Numerical SimulationHan-Youl Ryu0Department of Physics, Inha UniversityAbstract GaN-based blue laser diodes (LDs) may exhibit anomalous temperature characteristics such as a very high characteristic temperature (T 0) or even negative T 0. In this work, temperature-dependent characteristics of GaN-based blue LDs with InGaN double quantum well (QW) structures were investigated using numerical simulations. The temperature-dependent threshold current is found to become increasingly anomalous as the thickness or doping concentration of the barrier layer between QWs increases. For a properly chosen barrier thickness and doping concentration, very high T 0 of >10,000 K can be obtained. The anomalous temperature characteristics of these InGaN blue LDs are attributed to the increase of gain at the n-side QW with increasing temperature because of the thermally enhanced hole transport from the p-side to the n-side QW.http://link.springer.com/article/10.1186/s11671-017-2141-6Characteristic temperatureGaNQuantum wellLaser diodeCarrier transport |
| spellingShingle | Han-Youl Ryu Investigation into the Anomalous Temperature Characteristics of InGaN Double Quantum Well Blue Laser Diodes Using Numerical Simulation Nanoscale Research Letters Characteristic temperature GaN Quantum well Laser diode Carrier transport |
| title | Investigation into the Anomalous Temperature Characteristics of InGaN Double Quantum Well Blue Laser Diodes Using Numerical Simulation |
| title_full | Investigation into the Anomalous Temperature Characteristics of InGaN Double Quantum Well Blue Laser Diodes Using Numerical Simulation |
| title_fullStr | Investigation into the Anomalous Temperature Characteristics of InGaN Double Quantum Well Blue Laser Diodes Using Numerical Simulation |
| title_full_unstemmed | Investigation into the Anomalous Temperature Characteristics of InGaN Double Quantum Well Blue Laser Diodes Using Numerical Simulation |
| title_short | Investigation into the Anomalous Temperature Characteristics of InGaN Double Quantum Well Blue Laser Diodes Using Numerical Simulation |
| title_sort | investigation into the anomalous temperature characteristics of ingan double quantum well blue laser diodes using numerical simulation |
| topic | Characteristic temperature GaN Quantum well Laser diode Carrier transport |
| url | http://link.springer.com/article/10.1186/s11671-017-2141-6 |
| work_keys_str_mv | AT hanyoulryu investigationintotheanomaloustemperaturecharacteristicsofingandoublequantumwellbluelaserdiodesusingnumericalsimulation |