Virtual Work Principle for Piezoelectric Semiconductors and Its Application on Extension and Bending of ZnO Nanowires
This paper presents the principle of virtual work (PVW) for piezoelectric semiconductors (PSs), which extends the piezoelectric dielectrics to involve the semiconducting effect. As an application of the PVW, a one-dimensional (1D) approximation theory for the extension and bending of PS nanowires is...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-09-01
|
| Series: | Crystals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-4352/13/9/1368 |
| _version_ | 1797580650929192960 |
|---|---|
| author | Jingbo Chen Gongye Zhang Dongbo Li Yilin Qu |
| author_facet | Jingbo Chen Gongye Zhang Dongbo Li Yilin Qu |
| author_sort | Jingbo Chen |
| collection | DOAJ |
| description | This paper presents the principle of virtual work (PVW) for piezoelectric semiconductors (PSs), which extends the piezoelectric dielectrics to involve the semiconducting effect. As an application of the PVW, a one-dimensional (1D) approximation theory for the extension and bending of PS nanowires is established by directly applying the PVW and Bernoulli–Euler beam theory with the aid of the second-order approximation of electrostatic potential. To illustrate the new model, the mechanical displacement, electrostatic potential, and concentration of electrons for extension and bending deformation of n-type ZnO nanowires are analytically determined. Additionally, numerical results show that, for n-type Zinc Oxide nanowires, the distribution of electrostatic potential is anti-symmetric along the thickness direction for extension deformation. In contrast, the bending deformation causes a symmetric distribution of electrostatic potential characterized by the zeroth-order and the second-order electrostatic potential. Furthermore, these two different deformations result in the redistribution of electrons. The electrostatic potential can be tuned by adjusting the amplitude of the applied mechanical load. Moreover, we find that the increase in doping level will reduce the magnitude of electrostatic potential due to the screening effect. The presented PVW provides a general approach to establishing structural theories and an effective way of implementing numerical methods. |
| first_indexed | 2024-03-10T22:52:56Z |
| format | Article |
| id | doaj.art-1b27bffebe7849a380a3fb24dc434321 |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-10T22:52:56Z |
| publishDate | 2023-09-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-1b27bffebe7849a380a3fb24dc4343212023-11-19T10:09:43ZengMDPI AGCrystals2073-43522023-09-01139136810.3390/cryst13091368Virtual Work Principle for Piezoelectric Semiconductors and Its Application on Extension and Bending of ZnO NanowiresJingbo Chen0Gongye Zhang1Dongbo Li2Yilin Qu3Unmanned Vehicle Innovation Center, Ningbo Institute of NPU, Ningbo 315048, ChinaJiangsu Key Laboratory of Engineering Mechanics, School of Civil Engineering, Southeast University, Nanjing 210096, ChinaSchool of Science, Xi’an University of Architecture and Technology, Xi’an 710055, ChinaUnmanned Vehicle Innovation Center, Ningbo Institute of NPU, Ningbo 315048, ChinaThis paper presents the principle of virtual work (PVW) for piezoelectric semiconductors (PSs), which extends the piezoelectric dielectrics to involve the semiconducting effect. As an application of the PVW, a one-dimensional (1D) approximation theory for the extension and bending of PS nanowires is established by directly applying the PVW and Bernoulli–Euler beam theory with the aid of the second-order approximation of electrostatic potential. To illustrate the new model, the mechanical displacement, electrostatic potential, and concentration of electrons for extension and bending deformation of n-type ZnO nanowires are analytically determined. Additionally, numerical results show that, for n-type Zinc Oxide nanowires, the distribution of electrostatic potential is anti-symmetric along the thickness direction for extension deformation. In contrast, the bending deformation causes a symmetric distribution of electrostatic potential characterized by the zeroth-order and the second-order electrostatic potential. Furthermore, these two different deformations result in the redistribution of electrons. The electrostatic potential can be tuned by adjusting the amplitude of the applied mechanical load. Moreover, we find that the increase in doping level will reduce the magnitude of electrostatic potential due to the screening effect. The presented PVW provides a general approach to establishing structural theories and an effective way of implementing numerical methods.https://www.mdpi.com/2073-4352/13/9/1368principle of virtual workpiezoelectric semiconductorsBernoulli–Euler beam theoryextensionbending |
| spellingShingle | Jingbo Chen Gongye Zhang Dongbo Li Yilin Qu Virtual Work Principle for Piezoelectric Semiconductors and Its Application on Extension and Bending of ZnO Nanowires Crystals principle of virtual work piezoelectric semiconductors Bernoulli–Euler beam theory extension bending |
| title | Virtual Work Principle for Piezoelectric Semiconductors and Its Application on Extension and Bending of ZnO Nanowires |
| title_full | Virtual Work Principle for Piezoelectric Semiconductors and Its Application on Extension and Bending of ZnO Nanowires |
| title_fullStr | Virtual Work Principle for Piezoelectric Semiconductors and Its Application on Extension and Bending of ZnO Nanowires |
| title_full_unstemmed | Virtual Work Principle for Piezoelectric Semiconductors and Its Application on Extension and Bending of ZnO Nanowires |
| title_short | Virtual Work Principle for Piezoelectric Semiconductors and Its Application on Extension and Bending of ZnO Nanowires |
| title_sort | virtual work principle for piezoelectric semiconductors and its application on extension and bending of zno nanowires |
| topic | principle of virtual work piezoelectric semiconductors Bernoulli–Euler beam theory extension bending |
| url | https://www.mdpi.com/2073-4352/13/9/1368 |
| work_keys_str_mv | AT jingbochen virtualworkprincipleforpiezoelectricsemiconductorsanditsapplicationonextensionandbendingofznonanowires AT gongyezhang virtualworkprincipleforpiezoelectricsemiconductorsanditsapplicationonextensionandbendingofznonanowires AT dongboli virtualworkprincipleforpiezoelectricsemiconductorsanditsapplicationonextensionandbendingofznonanowires AT yilinqu virtualworkprincipleforpiezoelectricsemiconductorsanditsapplicationonextensionandbendingofznonanowires |