Identification of fragment ions produced from hexamethyldigermane and the production of low-energy beam of fragment ion possessing Ge-C bond
Fragment ions produced from hexamethyldigermane (HMDG) were identified using an ion beam system. The possible chemical formulae for these ions are CH3+, C2H4+, Ge+, GeCHx+, and GeC3Hx+. Among the fragment ions, GeCHx+ ions were mass-selected and irradiated to a Si substrate at room temperature. The...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-02-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5084181 |
| Summary: | Fragment ions produced from hexamethyldigermane (HMDG) were identified using an ion beam system. The possible chemical formulae for these ions are CH3+, C2H4+, Ge+, GeCHx+, and GeC3Hx+. Among the fragment ions, GeCHx+ ions were mass-selected and irradiated to a Si substrate at room temperature. The ion energy was set at approximately 10 eV. The analyses of the film deposited on the substrate suggested that GeCHx+ ion beam produced from HMDG was useful for germanium-carbon film formation. |
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| ISSN: | 2158-3226 |