Enhanced NH<sub>3</sub> Sensing Performance of Mo Cluster-MoS<sub>2</sub> Nanocomposite Thin Films via the Sulfurization of Mo<sub>6</sub> Cluster Iodides Precursor
The high-performance defect-rich MoS<sub>2</sub> dominated by sulfur vacancies as well as Mo-rich environments have been extensively studied in many fields, such as nitrogen reduction reactions, hydrogen evolution reactions, as well as sensing devices for NH<sub>3</sub>, whic...
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MDPI AG
2023-01-01
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author | Meiqi Zhang Fabien Grasset Yuji Masubuchi Toshihiro Shimada Thi Kim Ngan Nguyen Noée Dumait Adèle Renaud Stéphane Cordier David Berthebaud Jean-François Halet Tetsuo Uchikoshi |
author_facet | Meiqi Zhang Fabien Grasset Yuji Masubuchi Toshihiro Shimada Thi Kim Ngan Nguyen Noée Dumait Adèle Renaud Stéphane Cordier David Berthebaud Jean-François Halet Tetsuo Uchikoshi |
author_sort | Meiqi Zhang |
collection | DOAJ |
description | The high-performance defect-rich MoS<sub>2</sub> dominated by sulfur vacancies as well as Mo-rich environments have been extensively studied in many fields, such as nitrogen reduction reactions, hydrogen evolution reactions, as well as sensing devices for NH<sub>3</sub>, which are attributed to the under-coordinated Mo atoms playing a significant role as catalytic sites in the defect area. In this study, the Mo cluster-MoS<sub>2</sub> composite was creatively synthesized through a one-step sulfurization process via H<sub>2</sub>/H<sub>2</sub>S gas flow. The Mo<sub>6</sub> cluster iodides (MIs) coated on the fluorine-doped tin oxide (FTO) glass substrate via the electrophoretic deposition method (i.e., MI@FTO) were used as a precursor to form a thin-film nanocomposite. Investigations into the structure, reaction mechanism, and NH<sub>3</sub> gas sensing performance were carried out in detail. The results indicated that during the gas flowing, the decomposed Mo<sub>6</sub> cluster iodides played the role of template and precursor, forming complicated Mo cluster compounds and eventually producing MoS<sub>2</sub>. These Mo cluster-MoS<sub>2</sub> thin-film nanocomposites were fabricated and applied as gas sensors for the first time. It turns out that after the sulfurization process, the response of MI@FTO for NH<sub>3</sub> gas increased three times while showing conversion from p-type to n-type semiconductor, which enhances their possibilities for future device applications. |
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spelling | doaj.art-1b4b68fa17c6433ca29a57dcdede334c2023-11-16T17:35:19ZengMDPI AGNanomaterials2079-49912023-01-0113347810.3390/nano13030478Enhanced NH<sub>3</sub> Sensing Performance of Mo Cluster-MoS<sub>2</sub> Nanocomposite Thin Films via the Sulfurization of Mo<sub>6</sub> Cluster Iodides PrecursorMeiqi Zhang0Fabien Grasset1Yuji Masubuchi2Toshihiro Shimada3Thi Kim Ngan Nguyen4Noée Dumait5Adèle Renaud6Stéphane Cordier7David Berthebaud8Jean-François Halet9Tetsuo Uchikoshi10Graduate School of Chemical Sciences and Engineering, Hokkaido University, Kita 13 Nishi 8, Kita-ku, Sapporo 060-8628, JapanCNRS–Saint-Gobain–NIMS, IRL3629, Laboratory for Innovative Key Materials and Structures (LINK), National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, JapanGraduate School of Chemical Sciences and Engineering, Hokkaido University, Kita 13 Nishi 8, Kita-ku, Sapporo 060-8628, JapanGraduate School of Chemical Sciences and Engineering, Hokkaido University, Kita 13 Nishi 8, Kita-ku, Sapporo 060-8628, JapanCNRS–Saint-Gobain–NIMS, IRL3629, Laboratory for Innovative Key Materials and Structures (LINK), National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, JapanUniv Rennes, CNRS, Institut des Sciences Chimiques de Rennes (ISCR)–UMR 6226, F-35000 Rennes, FranceUniv Rennes, CNRS, Institut des Sciences Chimiques de Rennes (ISCR)–UMR 6226, F-35000 Rennes, FranceUniv Rennes, CNRS, Institut des Sciences Chimiques de Rennes (ISCR)–UMR 6226, F-35000 Rennes, FranceCNRS–Saint-Gobain–NIMS, IRL3629, Laboratory for Innovative Key Materials and Structures (LINK), National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, JapanCNRS–Saint-Gobain–NIMS, IRL3629, Laboratory for Innovative Key Materials and Structures (LINK), National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, JapanGraduate School of Chemical Sciences and Engineering, Hokkaido University, Kita 13 Nishi 8, Kita-ku, Sapporo 060-8628, JapanThe high-performance defect-rich MoS<sub>2</sub> dominated by sulfur vacancies as well as Mo-rich environments have been extensively studied in many fields, such as nitrogen reduction reactions, hydrogen evolution reactions, as well as sensing devices for NH<sub>3</sub>, which are attributed to the under-coordinated Mo atoms playing a significant role as catalytic sites in the defect area. In this study, the Mo cluster-MoS<sub>2</sub> composite was creatively synthesized through a one-step sulfurization process via H<sub>2</sub>/H<sub>2</sub>S gas flow. The Mo<sub>6</sub> cluster iodides (MIs) coated on the fluorine-doped tin oxide (FTO) glass substrate via the electrophoretic deposition method (i.e., MI@FTO) were used as a precursor to form a thin-film nanocomposite. Investigations into the structure, reaction mechanism, and NH<sub>3</sub> gas sensing performance were carried out in detail. The results indicated that during the gas flowing, the decomposed Mo<sub>6</sub> cluster iodides played the role of template and precursor, forming complicated Mo cluster compounds and eventually producing MoS<sub>2</sub>. These Mo cluster-MoS<sub>2</sub> thin-film nanocomposites were fabricated and applied as gas sensors for the first time. It turns out that after the sulfurization process, the response of MI@FTO for NH<sub>3</sub> gas increased three times while showing conversion from p-type to n-type semiconductor, which enhances their possibilities for future device applications.https://www.mdpi.com/2079-4991/13/3/478molybdenum octahedral clustermolybdenum disulfidesulfurization processgas sensor |
spellingShingle | Meiqi Zhang Fabien Grasset Yuji Masubuchi Toshihiro Shimada Thi Kim Ngan Nguyen Noée Dumait Adèle Renaud Stéphane Cordier David Berthebaud Jean-François Halet Tetsuo Uchikoshi Enhanced NH<sub>3</sub> Sensing Performance of Mo Cluster-MoS<sub>2</sub> Nanocomposite Thin Films via the Sulfurization of Mo<sub>6</sub> Cluster Iodides Precursor Nanomaterials molybdenum octahedral cluster molybdenum disulfide sulfurization process gas sensor |
title | Enhanced NH<sub>3</sub> Sensing Performance of Mo Cluster-MoS<sub>2</sub> Nanocomposite Thin Films via the Sulfurization of Mo<sub>6</sub> Cluster Iodides Precursor |
title_full | Enhanced NH<sub>3</sub> Sensing Performance of Mo Cluster-MoS<sub>2</sub> Nanocomposite Thin Films via the Sulfurization of Mo<sub>6</sub> Cluster Iodides Precursor |
title_fullStr | Enhanced NH<sub>3</sub> Sensing Performance of Mo Cluster-MoS<sub>2</sub> Nanocomposite Thin Films via the Sulfurization of Mo<sub>6</sub> Cluster Iodides Precursor |
title_full_unstemmed | Enhanced NH<sub>3</sub> Sensing Performance of Mo Cluster-MoS<sub>2</sub> Nanocomposite Thin Films via the Sulfurization of Mo<sub>6</sub> Cluster Iodides Precursor |
title_short | Enhanced NH<sub>3</sub> Sensing Performance of Mo Cluster-MoS<sub>2</sub> Nanocomposite Thin Films via the Sulfurization of Mo<sub>6</sub> Cluster Iodides Precursor |
title_sort | enhanced nh sub 3 sub sensing performance of mo cluster mos sub 2 sub nanocomposite thin films via the sulfurization of mo sub 6 sub cluster iodides precursor |
topic | molybdenum octahedral cluster molybdenum disulfide sulfurization process gas sensor |
url | https://www.mdpi.com/2079-4991/13/3/478 |
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