High Performance Graphene–C60–Bismuth Telluride–C60–Graphene Nanometer Thin Film Phototransistor with Adjustable Positive and Negative Responses
Abstract Graphene is a promising candidate for the next‐generation infrared array image sensors at room temperature due to its high mobility, tunable energy band, wide band absorption, and compatibility with complementary metal oxide semiconductor process. However, it is difficult to simultaneously...
| Main Authors: | , , , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2023-04-01
|
| Series: | Advanced Science |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/advs.202206997 |
| _version_ | 1797851961245040640 |
|---|---|
| author | Rui Pan Yuanlingyun Cai Feifei Zhang Si Wang Lianwei Chen Xingdong Feng Yingli Ha Renyan Zhang Mingbo Pu Xiong Li Xiaoliang Ma Xiangang Luo |
| author_facet | Rui Pan Yuanlingyun Cai Feifei Zhang Si Wang Lianwei Chen Xingdong Feng Yingli Ha Renyan Zhang Mingbo Pu Xiong Li Xiaoliang Ma Xiangang Luo |
| author_sort | Rui Pan |
| collection | DOAJ |
| description | Abstract Graphene is a promising candidate for the next‐generation infrared array image sensors at room temperature due to its high mobility, tunable energy band, wide band absorption, and compatibility with complementary metal oxide semiconductor process. However, it is difficult to simultaneously obtain ultrafast response time and ultrahigh responsivity, which limits the further improvement of graphene photoconductive devices. Here, a novel graphene/C60/bismuth telluride/C60/graphene vertical heterojunction phototransistor is proposed. The response spectral range covers 400–1800 nm; the responsivity peak is 106 A W−1; and the peak detection rate and peak response speed reach 1014 Jones and 250 µs, respectively. In addition, the regulation of positive and negative photocurrents at a gate voltage is characterized and the ionization process in impurities of the designed phototransistor at a low temperature is analyzed. Tunable bidirectional response provides a new degree of freedom for phototransistors' signal resolution. The analysis of the dynamic change process of impurity energy level is conducted to improve the device's performance. From the perspective of manufacturing process, the ultrathin phototransistor (20–30 nm) is compatible with functional metasurface to realize wavelength or polarization selection, making it possible to achieve large‐scale production of integrated spectrometer or polarization imaging sensor by nanoimprinting process. |
| first_indexed | 2024-04-09T19:26:18Z |
| format | Article |
| id | doaj.art-1b587fd538eb4789a915a1952904909c |
| institution | Directory Open Access Journal |
| issn | 2198-3844 |
| language | English |
| last_indexed | 2024-04-09T19:26:18Z |
| publishDate | 2023-04-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Science |
| spelling | doaj.art-1b587fd538eb4789a915a1952904909c2023-04-05T08:09:48ZengWileyAdvanced Science2198-38442023-04-011010n/an/a10.1002/advs.202206997High Performance Graphene–C60–Bismuth Telluride–C60–Graphene Nanometer Thin Film Phototransistor with Adjustable Positive and Negative ResponsesRui Pan0Yuanlingyun Cai1Feifei Zhang2Si Wang3Lianwei Chen4Xingdong Feng5Yingli Ha6Renyan Zhang7Mingbo Pu8Xiong Li9Xiaoliang Ma10Xiangang Luo11State Key Laboratory of Optical Technologies on Nano‐Fabrication and Micro‐Engineering Institute of Optics and Electronics Chinese Academy of Sciences Chengdu 610209 P. R. ChinaState Key Laboratory of Optical Technologies on Nano‐Fabrication and Micro‐Engineering Institute of Optics and Electronics Chinese Academy of Sciences Chengdu 610209 P. R. ChinaState Key Laboratory of Optical Technologies on Nano‐Fabrication and Micro‐Engineering Institute of Optics and Electronics Chinese Academy of Sciences Chengdu 610209 P. R. ChinaState Key Laboratory of Optical Technologies on Nano‐Fabrication and Micro‐Engineering Institute of Optics and Electronics Chinese Academy of Sciences Chengdu 610209 P. R. ChinaState Key Laboratory of Optical Technologies on Nano‐Fabrication and Micro‐Engineering Institute of Optics and Electronics Chinese Academy of Sciences Chengdu 610209 P. R. ChinaState Key Laboratory of Optical Technologies on Nano‐Fabrication and Micro‐Engineering Institute of Optics and Electronics Chinese Academy of Sciences Chengdu 610209 P. R. ChinaState Key Laboratory of Optical Technologies on Nano‐Fabrication and Micro‐Engineering Institute of Optics and Electronics Chinese Academy of Sciences Chengdu 610209 P. R. ChinaState Key Laboratory of Optical Technologies on Nano‐Fabrication and Micro‐Engineering Institute of Optics and Electronics Chinese Academy of Sciences Chengdu 610209 P. R. ChinaState Key Laboratory of Optical Technologies on Nano‐Fabrication and Micro‐Engineering Institute of Optics and Electronics Chinese Academy of Sciences Chengdu 610209 P. R. ChinaState Key Laboratory of Optical Technologies on Nano‐Fabrication and Micro‐Engineering Institute of Optics and Electronics Chinese Academy of Sciences Chengdu 610209 P. R. ChinaState Key Laboratory of Optical Technologies on Nano‐Fabrication and Micro‐Engineering Institute of Optics and Electronics Chinese Academy of Sciences Chengdu 610209 P. R. ChinaState Key Laboratory of Optical Technologies on Nano‐Fabrication and Micro‐Engineering Institute of Optics and Electronics Chinese Academy of Sciences Chengdu 610209 P. R. ChinaAbstract Graphene is a promising candidate for the next‐generation infrared array image sensors at room temperature due to its high mobility, tunable energy band, wide band absorption, and compatibility with complementary metal oxide semiconductor process. However, it is difficult to simultaneously obtain ultrafast response time and ultrahigh responsivity, which limits the further improvement of graphene photoconductive devices. Here, a novel graphene/C60/bismuth telluride/C60/graphene vertical heterojunction phototransistor is proposed. The response spectral range covers 400–1800 nm; the responsivity peak is 106 A W−1; and the peak detection rate and peak response speed reach 1014 Jones and 250 µs, respectively. In addition, the regulation of positive and negative photocurrents at a gate voltage is characterized and the ionization process in impurities of the designed phototransistor at a low temperature is analyzed. Tunable bidirectional response provides a new degree of freedom for phototransistors' signal resolution. The analysis of the dynamic change process of impurity energy level is conducted to improve the device's performance. From the perspective of manufacturing process, the ultrathin phototransistor (20–30 nm) is compatible with functional metasurface to realize wavelength or polarization selection, making it possible to achieve large‐scale production of integrated spectrometer or polarization imaging sensor by nanoimprinting process.https://doi.org/10.1002/advs.2022069972D materialbidirectional responsegate voltage regulationgraphenephototransistor |
| spellingShingle | Rui Pan Yuanlingyun Cai Feifei Zhang Si Wang Lianwei Chen Xingdong Feng Yingli Ha Renyan Zhang Mingbo Pu Xiong Li Xiaoliang Ma Xiangang Luo High Performance Graphene–C60–Bismuth Telluride–C60–Graphene Nanometer Thin Film Phototransistor with Adjustable Positive and Negative Responses Advanced Science 2D material bidirectional response gate voltage regulation graphene phototransistor |
| title | High Performance Graphene–C60–Bismuth Telluride–C60–Graphene Nanometer Thin Film Phototransistor with Adjustable Positive and Negative Responses |
| title_full | High Performance Graphene–C60–Bismuth Telluride–C60–Graphene Nanometer Thin Film Phototransistor with Adjustable Positive and Negative Responses |
| title_fullStr | High Performance Graphene–C60–Bismuth Telluride–C60–Graphene Nanometer Thin Film Phototransistor with Adjustable Positive and Negative Responses |
| title_full_unstemmed | High Performance Graphene–C60–Bismuth Telluride–C60–Graphene Nanometer Thin Film Phototransistor with Adjustable Positive and Negative Responses |
| title_short | High Performance Graphene–C60–Bismuth Telluride–C60–Graphene Nanometer Thin Film Phototransistor with Adjustable Positive and Negative Responses |
| title_sort | high performance graphene c60 bismuth telluride c60 graphene nanometer thin film phototransistor with adjustable positive and negative responses |
| topic | 2D material bidirectional response gate voltage regulation graphene phototransistor |
| url | https://doi.org/10.1002/advs.202206997 |
| work_keys_str_mv | AT ruipan highperformancegraphenec60bismuthtelluridec60graphenenanometerthinfilmphototransistorwithadjustablepositiveandnegativeresponses AT yuanlingyuncai highperformancegraphenec60bismuthtelluridec60graphenenanometerthinfilmphototransistorwithadjustablepositiveandnegativeresponses AT feifeizhang highperformancegraphenec60bismuthtelluridec60graphenenanometerthinfilmphototransistorwithadjustablepositiveandnegativeresponses AT siwang highperformancegraphenec60bismuthtelluridec60graphenenanometerthinfilmphototransistorwithadjustablepositiveandnegativeresponses AT lianweichen highperformancegraphenec60bismuthtelluridec60graphenenanometerthinfilmphototransistorwithadjustablepositiveandnegativeresponses AT xingdongfeng highperformancegraphenec60bismuthtelluridec60graphenenanometerthinfilmphototransistorwithadjustablepositiveandnegativeresponses AT yingliha highperformancegraphenec60bismuthtelluridec60graphenenanometerthinfilmphototransistorwithadjustablepositiveandnegativeresponses AT renyanzhang highperformancegraphenec60bismuthtelluridec60graphenenanometerthinfilmphototransistorwithadjustablepositiveandnegativeresponses AT mingbopu highperformancegraphenec60bismuthtelluridec60graphenenanometerthinfilmphototransistorwithadjustablepositiveandnegativeresponses AT xiongli highperformancegraphenec60bismuthtelluridec60graphenenanometerthinfilmphototransistorwithadjustablepositiveandnegativeresponses AT xiaoliangma highperformancegraphenec60bismuthtelluridec60graphenenanometerthinfilmphototransistorwithadjustablepositiveandnegativeresponses AT xiangangluo highperformancegraphenec60bismuthtelluridec60graphenenanometerthinfilmphototransistorwithadjustablepositiveandnegativeresponses |