Infrared detection through CMOS detector enabled by reversible luminescence quenching of quantum dots
The detection of infrared radiation through a CMOS detector has recently intrigued the scientists and engineers all over the world. This could lower the cost, simplify the operation, and improve the pixel of the conventional infrared detection technology. To achieve this objective, the infrared ligh...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2023-02-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0137649 |
| _version_ | 1811154883788668928 |
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| author | Jeffrey Gan Wang Ruihua Ma Xing Wu Kangmin Leng Qisheng Wang |
| author_facet | Jeffrey Gan Wang Ruihua Ma Xing Wu Kangmin Leng Qisheng Wang |
| author_sort | Jeffrey Gan Wang |
| collection | DOAJ |
| description | The detection of infrared radiation through a CMOS detector has recently intrigued the scientists and engineers all over the world. This could lower the cost, simplify the operation, and improve the pixel of the conventional infrared detection technology. To achieve this objective, the infrared light is converted into visible light via up-conversion nanoparticles or LED, which, however, suffers from complicated device fabrication. Herein, we report a type of simple infrared detection via a CMOS detector based on quantum dots (QDs). Inspired by the temperature effect of luminescence QDs, we design a setup that modulates the luminescence intensity of QDs via infrared radiation, which can be read out through a CMOS camera. Furthermore, the underlying mechanism of thermal quenching behavior is investigated through measurements of transient photoluminescence. Compared with traditional IR detectors, our infrared detection system possesses the advantages of facile fabrication and scalability, showing great potential for infrared detection. |
| first_indexed | 2024-04-10T04:24:42Z |
| format | Article |
| id | doaj.art-1b72d98b11df4210b5017f2968f4d2fc |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-04-10T04:24:42Z |
| publishDate | 2023-02-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-1b72d98b11df4210b5017f2968f4d2fc2023-03-10T17:26:20ZengAIP Publishing LLCAIP Advances2158-32262023-02-01132025139025139-710.1063/5.0137649Infrared detection through CMOS detector enabled by reversible luminescence quenching of quantum dotsJeffrey Gan Wang0Ruihua Ma1Xing Wu2Kangmin Leng3Qisheng Wang4Ithaca High School, Ithaca, New York 14850, USADepartment of Physics, Nanchang University, Nanchang 330031, ChinaDepartment of Physics, Nanchang University, Nanchang 330031, ChinaDepartment of Physics, Nanchang University, Nanchang 330031, ChinaDepartment of Physics, Nanchang University, Nanchang 330031, ChinaThe detection of infrared radiation through a CMOS detector has recently intrigued the scientists and engineers all over the world. This could lower the cost, simplify the operation, and improve the pixel of the conventional infrared detection technology. To achieve this objective, the infrared light is converted into visible light via up-conversion nanoparticles or LED, which, however, suffers from complicated device fabrication. Herein, we report a type of simple infrared detection via a CMOS detector based on quantum dots (QDs). Inspired by the temperature effect of luminescence QDs, we design a setup that modulates the luminescence intensity of QDs via infrared radiation, which can be read out through a CMOS camera. Furthermore, the underlying mechanism of thermal quenching behavior is investigated through measurements of transient photoluminescence. Compared with traditional IR detectors, our infrared detection system possesses the advantages of facile fabrication and scalability, showing great potential for infrared detection.http://dx.doi.org/10.1063/5.0137649 |
| spellingShingle | Jeffrey Gan Wang Ruihua Ma Xing Wu Kangmin Leng Qisheng Wang Infrared detection through CMOS detector enabled by reversible luminescence quenching of quantum dots AIP Advances |
| title | Infrared detection through CMOS detector enabled by reversible luminescence quenching of quantum dots |
| title_full | Infrared detection through CMOS detector enabled by reversible luminescence quenching of quantum dots |
| title_fullStr | Infrared detection through CMOS detector enabled by reversible luminescence quenching of quantum dots |
| title_full_unstemmed | Infrared detection through CMOS detector enabled by reversible luminescence quenching of quantum dots |
| title_short | Infrared detection through CMOS detector enabled by reversible luminescence quenching of quantum dots |
| title_sort | infrared detection through cmos detector enabled by reversible luminescence quenching of quantum dots |
| url | http://dx.doi.org/10.1063/5.0137649 |
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