Preparation and Specific Capacitance Properties of Sulfur, Nitrogen Co-Doped Graphene Quantum Dots
Abstract Sulfur, nitrogen co-doped graphene quantum dots (S, N-GQDs) with high crystallinity were obtained by a top-down strategy. The as-prepared S, N-GQDs were investigated and the results indicate that S, N-GQDs exhibit a transverse dimension about 20 nm and a topographic height of 1–2 layers gra...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2019-07-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://link.springer.com/article/10.1186/s11671-019-3045-4 |
| _version_ | 1797722538008117248 |
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| author | Zhong Ouyang Yun Lei Yunpeng Chen Zheng Zhang Zicong Jiang Jiaxin Hu Yuanyuan Lin |
| author_facet | Zhong Ouyang Yun Lei Yunpeng Chen Zheng Zhang Zicong Jiang Jiaxin Hu Yuanyuan Lin |
| author_sort | Zhong Ouyang |
| collection | DOAJ |
| description | Abstract Sulfur, nitrogen co-doped graphene quantum dots (S, N-GQDs) with high crystallinity were obtained by a top-down strategy. The as-prepared S, N-GQDs were investigated and the results indicate that S, N-GQDs exhibit a transverse dimension about 20 nm and a topographic height of 1–2 layers graphene. The incorporation of S, N can effectively reduce the layers of GQDs and strip the graphene sheets. Moreover, the S, N-GQDs reveal an absorption band located at 405 nm and exhibit an adjustable fluorescence characteristic in the excitation-visible range. Meanwhile, the S, N-GQDs shows a high specific capacitance of 362.60 F g−1 at a fixed scan rate of 5 mV s −1. This high performance is ascribed to the additional high pseudocapacitance provided by the doped S, N and the doping state acting as a trap state to enhance the charge storage capacity. The high specific capacitance advantages of S, N-GQDs illustrate their potential prospects in the capacitors. |
| first_indexed | 2024-03-12T09:49:44Z |
| format | Article |
| id | doaj.art-1b78ab028e9f4b0fb7a1d070c2b3c1fa |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T09:49:44Z |
| publishDate | 2019-07-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-1b78ab028e9f4b0fb7a1d070c2b3c1fa2023-09-02T12:38:16ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2019-07-011411910.1186/s11671-019-3045-4Preparation and Specific Capacitance Properties of Sulfur, Nitrogen Co-Doped Graphene Quantum DotsZhong Ouyang0Yun Lei1Yunpeng Chen2Zheng Zhang3Zicong Jiang4Jiaxin Hu5Yuanyuan Lin6School of Resources and Environmental Engineering, Wuhan University of TechnologySchool of Resources and Environmental Engineering, Wuhan University of TechnologySchool of Resources and Environmental Engineering, Wuhan University of TechnologySchool of Resources and Environmental Engineering, Wuhan University of TechnologySchool of Resources and Environmental Engineering, Wuhan University of TechnologySchool of Resources and Environmental Engineering, Wuhan University of TechnologySchool of Resources and Environmental Engineering, Wuhan University of TechnologyAbstract Sulfur, nitrogen co-doped graphene quantum dots (S, N-GQDs) with high crystallinity were obtained by a top-down strategy. The as-prepared S, N-GQDs were investigated and the results indicate that S, N-GQDs exhibit a transverse dimension about 20 nm and a topographic height of 1–2 layers graphene. The incorporation of S, N can effectively reduce the layers of GQDs and strip the graphene sheets. Moreover, the S, N-GQDs reveal an absorption band located at 405 nm and exhibit an adjustable fluorescence characteristic in the excitation-visible range. Meanwhile, the S, N-GQDs shows a high specific capacitance of 362.60 F g−1 at a fixed scan rate of 5 mV s −1. This high performance is ascribed to the additional high pseudocapacitance provided by the doped S, N and the doping state acting as a trap state to enhance the charge storage capacity. The high specific capacitance advantages of S, N-GQDs illustrate their potential prospects in the capacitors.http://link.springer.com/article/10.1186/s11671-019-3045-4Graphene quantum dotsTop-downDoping ratiosThe specific capacitance |
| spellingShingle | Zhong Ouyang Yun Lei Yunpeng Chen Zheng Zhang Zicong Jiang Jiaxin Hu Yuanyuan Lin Preparation and Specific Capacitance Properties of Sulfur, Nitrogen Co-Doped Graphene Quantum Dots Nanoscale Research Letters Graphene quantum dots Top-down Doping ratios The specific capacitance |
| title | Preparation and Specific Capacitance Properties of Sulfur, Nitrogen Co-Doped Graphene Quantum Dots |
| title_full | Preparation and Specific Capacitance Properties of Sulfur, Nitrogen Co-Doped Graphene Quantum Dots |
| title_fullStr | Preparation and Specific Capacitance Properties of Sulfur, Nitrogen Co-Doped Graphene Quantum Dots |
| title_full_unstemmed | Preparation and Specific Capacitance Properties of Sulfur, Nitrogen Co-Doped Graphene Quantum Dots |
| title_short | Preparation and Specific Capacitance Properties of Sulfur, Nitrogen Co-Doped Graphene Quantum Dots |
| title_sort | preparation and specific capacitance properties of sulfur nitrogen co doped graphene quantum dots |
| topic | Graphene quantum dots Top-down Doping ratios The specific capacitance |
| url | http://link.springer.com/article/10.1186/s11671-019-3045-4 |
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