Deep Submicron EGFET Based on Transistor Association Technique for Chemical Sensing
Extended-gate field-effect transistor (EGFET) is an electronic interface originally developed as a substitute for an ion-sensitive field-effect transistor (ISFET). Although the literature shows that commercial off-the-shelf components are widely used for biosensor fabrication, studies on electronic...
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MDPI AG
2019-03-01
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author | Salvatore A. Pullano Nishat T. Tasneem Ifana Mahbub Samira Shamsir Marta Greco Syed K. Islam Antonino S. Fiorillo |
author_facet | Salvatore A. Pullano Nishat T. Tasneem Ifana Mahbub Samira Shamsir Marta Greco Syed K. Islam Antonino S. Fiorillo |
author_sort | Salvatore A. Pullano |
collection | DOAJ |
description | Extended-gate field-effect transistor (EGFET) is an electronic interface originally developed as a substitute for an ion-sensitive field-effect transistor (ISFET). Although the literature shows that commercial off-the-shelf components are widely used for biosensor fabrication, studies on electronic interfaces are still scarce (e.g., noise processes, scaling). Therefore, the incorporation of a custom EGFET can lead to biosensors with optimized performance. In this paper, the design and characterization of a transistor association (TA)-based EGFET was investigated. Prototypes were manufactured using a 130 nm standard complementary metal-oxide semiconductor (CMOS) process and compared with devices presented in recent literature. A DC equivalence with the counterpart involving a single equivalent transistor was observed. Experimental results showed a power consumption of 24.99 mW at 1.2 V supply voltage with a minimum die area of 0.685 × 1.2 mm2. The higher aspect ratio devices required a proportionally increased die area and power consumption. Conversely, the input-referred noise showed an opposite trend with a minimum of 176.4 nVrms over the 0.1 to 10 Hz frequency band for a higher aspect ratio. EGFET as a pH sensor presented further validation of the design with an average voltage sensitivity of 50.3 mV/pH, a maximum current sensitivity of 15.71 mA1/2/pH, a linearity higher than 99.9%, and the possibility of operating at a lower noise level with a compact design and a low complexity. |
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issn | 1424-8220 |
language | English |
last_indexed | 2024-04-11T13:11:14Z |
publishDate | 2019-03-01 |
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spelling | doaj.art-1b7b6e717b4a4547bae792abd03b19342022-12-22T04:22:35ZengMDPI AGSensors1424-82202019-03-01195106310.3390/s19051063s19051063Deep Submicron EGFET Based on Transistor Association Technique for Chemical SensingSalvatore A. Pullano0Nishat T. Tasneem1Ifana Mahbub2Samira Shamsir3Marta Greco4Syed K. Islam5Antonino S. Fiorillo6Department of Health Sciences, University “Magna Græcia” of Catanzaro, 88100 Catanzaro, ItalyDepartment of Electrical Engineering, University of North Texas, Denton, TX 76203, USADepartment of Electrical Engineering, University of North Texas, Denton, TX 76203, USADepartment of Electrical Engineering and Computer Science, University of Missouri, Columbia, MO 65211, USADepartment of Health Sciences, University “Magna Græcia” of Catanzaro, 88100 Catanzaro, ItalyDepartment of Electrical Engineering and Computer Science, University of Missouri, Columbia, MO 65211, USADepartment of Health Sciences, University “Magna Græcia” of Catanzaro, 88100 Catanzaro, ItalyExtended-gate field-effect transistor (EGFET) is an electronic interface originally developed as a substitute for an ion-sensitive field-effect transistor (ISFET). Although the literature shows that commercial off-the-shelf components are widely used for biosensor fabrication, studies on electronic interfaces are still scarce (e.g., noise processes, scaling). Therefore, the incorporation of a custom EGFET can lead to biosensors with optimized performance. In this paper, the design and characterization of a transistor association (TA)-based EGFET was investigated. Prototypes were manufactured using a 130 nm standard complementary metal-oxide semiconductor (CMOS) process and compared with devices presented in recent literature. A DC equivalence with the counterpart involving a single equivalent transistor was observed. Experimental results showed a power consumption of 24.99 mW at 1.2 V supply voltage with a minimum die area of 0.685 × 1.2 mm2. The higher aspect ratio devices required a proportionally increased die area and power consumption. Conversely, the input-referred noise showed an opposite trend with a minimum of 176.4 nVrms over the 0.1 to 10 Hz frequency band for a higher aspect ratio. EGFET as a pH sensor presented further validation of the design with an average voltage sensitivity of 50.3 mV/pH, a maximum current sensitivity of 15.71 mA1/2/pH, a linearity higher than 99.9%, and the possibility of operating at a lower noise level with a compact design and a low complexity.http://www.mdpi.com/1424-8220/19/5/1063EGFETelectronic interfacebiosensorslow noise designMOSFETcompact modelingpH sensor |
spellingShingle | Salvatore A. Pullano Nishat T. Tasneem Ifana Mahbub Samira Shamsir Marta Greco Syed K. Islam Antonino S. Fiorillo Deep Submicron EGFET Based on Transistor Association Technique for Chemical Sensing Sensors EGFET electronic interface biosensors low noise design MOSFET compact modeling pH sensor |
title | Deep Submicron EGFET Based on Transistor Association Technique for Chemical Sensing |
title_full | Deep Submicron EGFET Based on Transistor Association Technique for Chemical Sensing |
title_fullStr | Deep Submicron EGFET Based on Transistor Association Technique for Chemical Sensing |
title_full_unstemmed | Deep Submicron EGFET Based on Transistor Association Technique for Chemical Sensing |
title_short | Deep Submicron EGFET Based on Transistor Association Technique for Chemical Sensing |
title_sort | deep submicron egfet based on transistor association technique for chemical sensing |
topic | EGFET electronic interface biosensors low noise design MOSFET compact modeling pH sensor |
url | http://www.mdpi.com/1424-8220/19/5/1063 |
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