Analysis of electrical properties in lateral Schottky barrier diode based on n-GaN and AlGaN/GaN heterostructure

Analysis of electrical properties in lateral Schottky barrier diode based on n-GaN and AlGaN/GaN heterostructure

In this paper, the lateral Schottky barrier diodes (SBDs) with small capacitance and low turn-on voltage (Von) were fabricated on n-GaN and AlGaN/GaN heterostructure. The capacitances of lateral n-GaN SBD and lateral AlGaN/GaN SBD are 1.35 pF/mm and 0.70 pF/mm, respectively. Compared with the planar...

תיאור מלא

מידע ביבליוגרפי
Main Authors: Honghui Liu, Zhiwen Liang, Fengge Wang, Yanyan Xu, Xien Yang, Yisheng Liang, Xin Li, Lizhang Lin, Zhisheng Wu, Yang Liu, Baijun Zhang
פורמט: Article
שפה:English
יצא לאור: Frontiers Media S.A. 2022-11-01
סדרה:Frontiers in Physics
נושאים:
GaN
AlGaN/GaN
Schottky barrier diodes
metal-induced gap states
inhomogeneous SBHs
גישה מקוונת:https://www.frontiersin.org/articles/10.3389/fphy.2022.1084214/full

אינטרנט

https://www.frontiersin.org/articles/10.3389/fphy.2022.1084214/full

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