Effect of processing parameters on microstructure of MoS2 ultra-thin films synthesized by chemical vapor deposition method
MoS2 ultra-thin layers are synthesized using a chemical vapor deposition method based on the sulfurization of molybdenum trioxide (MoO3). The ultra-thin layers are characterized by X-ray diffraction (XRD), photoluminescence (PL) spectroscopy and atomic force microscope (AFM). Based on our experiment...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2015-06-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4922419 |
| _version_ | 1811204902077071360 |
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| author | Yang Song Yingzi Peng Suping You Kewei Sun Ji Chen Zhenghong Qian |
| author_facet | Yang Song Yingzi Peng Suping You Kewei Sun Ji Chen Zhenghong Qian |
| author_sort | Yang Song |
| collection | DOAJ |
| description | MoS2 ultra-thin layers are synthesized using a chemical vapor deposition method based on the sulfurization of molybdenum trioxide (MoO3). The ultra-thin layers are characterized by X-ray diffraction (XRD), photoluminescence (PL) spectroscopy and atomic force microscope (AFM). Based on our experimental results, all the processing parameters, such as the tilt angle of substrate, applied voltage, heating time and the weight of source materials have effect on the microstructures of the layers. In this paper, the effects of such processing parameters on the crystal structures and morphologies of the as-grown layers are studied. It is found that the film obtained with the tilt angle of 0.06° is more uniform. A larger applied voltage is preferred to the growth of MoS2 thin films at a certain heating time. In order to obtain the ultra-thin layers of MoS2, the weight of 0.003 g of source materials is preferred. Under our optimal experimental conditions, the surface of the film is smooth and composed of many uniformly distributed and aggregated particles, and the ultra-thin MoS2 atomic layers (1∼10 layers) covers an area of more than 2 mm×2 mm. |
| first_indexed | 2024-04-12T03:21:29Z |
| format | Article |
| id | doaj.art-1beaa3c0c3344fd793b6d42adbc34225 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-04-12T03:21:29Z |
| publishDate | 2015-06-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-1beaa3c0c3344fd793b6d42adbc342252022-12-22T03:49:52ZengAIP Publishing LLCAIP Advances2158-32262015-06-0156067119067119-810.1063/1.4922419018506ADVEffect of processing parameters on microstructure of MoS2 ultra-thin films synthesized by chemical vapor deposition methodYang Song0Yingzi Peng1Suping You2Kewei Sun3Ji Chen4Zhenghong Qian5Department of Physics, School of Science, Hangzhou Dianzi University, Hangzhou 310018, P.R.ChinaDepartment of Physics, School of Science, Hangzhou Dianzi University, Hangzhou 310018, P.R.ChinaDepartment of Physics, School of Science, Hangzhou Dianzi University, Hangzhou 310018, P.R.ChinaDepartment of Physics, School of Science, Hangzhou Dianzi University, Hangzhou 310018, P.R.ChinaDepartment of Physics, School of Science, Hangzhou Dianzi University, Hangzhou 310018, P.R.ChinaCenter for Integrated Spintronic Devices, Hangzhou Dianzi University, Hangzhou 310018, P.R.ChinaMoS2 ultra-thin layers are synthesized using a chemical vapor deposition method based on the sulfurization of molybdenum trioxide (MoO3). The ultra-thin layers are characterized by X-ray diffraction (XRD), photoluminescence (PL) spectroscopy and atomic force microscope (AFM). Based on our experimental results, all the processing parameters, such as the tilt angle of substrate, applied voltage, heating time and the weight of source materials have effect on the microstructures of the layers. In this paper, the effects of such processing parameters on the crystal structures and morphologies of the as-grown layers are studied. It is found that the film obtained with the tilt angle of 0.06° is more uniform. A larger applied voltage is preferred to the growth of MoS2 thin films at a certain heating time. In order to obtain the ultra-thin layers of MoS2, the weight of 0.003 g of source materials is preferred. Under our optimal experimental conditions, the surface of the film is smooth and composed of many uniformly distributed and aggregated particles, and the ultra-thin MoS2 atomic layers (1∼10 layers) covers an area of more than 2 mm×2 mm.http://dx.doi.org/10.1063/1.4922419 |
| spellingShingle | Yang Song Yingzi Peng Suping You Kewei Sun Ji Chen Zhenghong Qian Effect of processing parameters on microstructure of MoS2 ultra-thin films synthesized by chemical vapor deposition method AIP Advances |
| title | Effect of processing parameters on microstructure of MoS2 ultra-thin films synthesized by chemical vapor deposition method |
| title_full | Effect of processing parameters on microstructure of MoS2 ultra-thin films synthesized by chemical vapor deposition method |
| title_fullStr | Effect of processing parameters on microstructure of MoS2 ultra-thin films synthesized by chemical vapor deposition method |
| title_full_unstemmed | Effect of processing parameters on microstructure of MoS2 ultra-thin films synthesized by chemical vapor deposition method |
| title_short | Effect of processing parameters on microstructure of MoS2 ultra-thin films synthesized by chemical vapor deposition method |
| title_sort | effect of processing parameters on microstructure of mos2 ultra thin films synthesized by chemical vapor deposition method |
| url | http://dx.doi.org/10.1063/1.4922419 |
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