Current relaxation due to hot carrier scattering in graphene

In this paper, we present direct time-domain investigations of the relaxation of electric currents in graphene due to hot carrier scattering. We use coherent control with ultrashort optical pulses to photoinject a current and detect the terahertz (THz) radiation emitted by the resulting current surg...

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Main Authors: Dong Sun, Charles Divin, Momchil Mihnev, Torben Winzer, Ermin Malic, Andreas Knorr, John E Sipe, Claire Berger, Walt A de Heer, Phillip N First, Theodore B Norris
Format: Article
Language:English
Published: IOP Publishing 2012-01-01
Series:New Journal of Physics
Online Access:https://doi.org/10.1088/1367-2630/14/10/105012
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author Dong Sun
Charles Divin
Momchil Mihnev
Torben Winzer
Ermin Malic
Andreas Knorr
John E Sipe
Claire Berger
Walt A de Heer
Phillip N First
Theodore B Norris
author_facet Dong Sun
Charles Divin
Momchil Mihnev
Torben Winzer
Ermin Malic
Andreas Knorr
John E Sipe
Claire Berger
Walt A de Heer
Phillip N First
Theodore B Norris
author_sort Dong Sun
collection DOAJ
description In this paper, we present direct time-domain investigations of the relaxation of electric currents in graphene due to hot carrier scattering. We use coherent control with ultrashort optical pulses to photoinject a current and detect the terahertz (THz) radiation emitted by the resulting current surge. We pre-inject a background of hot carriers using a separate pump pulse, with a variable delay between the pump and current-injection pulses. We find the effect of the hot carrier background is to reduce the current and hence the emitted THz radiation. The current damping is determined simply by the density (or temperature) of the thermal carriers. The experimental behavior is accurately reproduced in a microscopic theory, which correctly incorporates the nonconservation of velocity in scattering between Dirac fermions. The results indicate that hot carriers are effective in damping the current, and are expected to be important for understanding the operation of high-speed graphene electronic devices.
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spelling doaj.art-1bed6e3a382b4ba3ba8eb567a654b0f62023-08-08T11:07:32ZengIOP PublishingNew Journal of Physics1367-26302012-01-01141010501210.1088/1367-2630/14/10/105012Current relaxation due to hot carrier scattering in grapheneDong Sun0Charles Divin1Momchil Mihnev2Torben Winzer3Ermin Malic4Andreas Knorr5John E Sipe6Claire Berger7Walt A de Heer8Phillip N First9Theodore B Norris10Center for Ultrafast Optical Science, University of Michigan , Ann Arbor, MI 48109-2099, USA; International Center for Quantum Materials, Peking University , 100871 Beijing, People's Republic of ChinaCenter for Ultrafast Optical Science, University of Michigan , Ann Arbor, MI 48109-2099, USACenter for Ultrafast Optical Science, University of Michigan , Ann Arbor, MI 48109-2099, USAInstitut für Theoretische Physik, Technische Universität Berlin , 10623 Berlin, GermanyInstitut für Theoretische Physik, Technische Universität Berlin , 10623 Berlin, GermanyInstitut für Theoretische Physik, Technische Universität Berlin , 10623 Berlin, GermanyDepartment of Physics and Institute for Optical Sciences, University of Toronto , ON M5S 1A7, CanadaSchool of Physics, Georgia Institute of Technology , Atlanta, GA 30332, USASchool of Physics, Georgia Institute of Technology , Atlanta, GA 30332, USASchool of Physics, Georgia Institute of Technology , Atlanta, GA 30332, USACenter for Ultrafast Optical Science, University of Michigan , Ann Arbor, MI 48109-2099, USAIn this paper, we present direct time-domain investigations of the relaxation of electric currents in graphene due to hot carrier scattering. We use coherent control with ultrashort optical pulses to photoinject a current and detect the terahertz (THz) radiation emitted by the resulting current surge. We pre-inject a background of hot carriers using a separate pump pulse, with a variable delay between the pump and current-injection pulses. We find the effect of the hot carrier background is to reduce the current and hence the emitted THz radiation. The current damping is determined simply by the density (or temperature) of the thermal carriers. The experimental behavior is accurately reproduced in a microscopic theory, which correctly incorporates the nonconservation of velocity in scattering between Dirac fermions. The results indicate that hot carriers are effective in damping the current, and are expected to be important for understanding the operation of high-speed graphene electronic devices.https://doi.org/10.1088/1367-2630/14/10/105012
spellingShingle Dong Sun
Charles Divin
Momchil Mihnev
Torben Winzer
Ermin Malic
Andreas Knorr
John E Sipe
Claire Berger
Walt A de Heer
Phillip N First
Theodore B Norris
Current relaxation due to hot carrier scattering in graphene
New Journal of Physics
title Current relaxation due to hot carrier scattering in graphene
title_full Current relaxation due to hot carrier scattering in graphene
title_fullStr Current relaxation due to hot carrier scattering in graphene
title_full_unstemmed Current relaxation due to hot carrier scattering in graphene
title_short Current relaxation due to hot carrier scattering in graphene
title_sort current relaxation due to hot carrier scattering in graphene
url https://doi.org/10.1088/1367-2630/14/10/105012
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