A New Type of Si-Based MOSFET for Radiation Reinforcement
This paper thoroughly analyses the role of drift in the sensitive region in the single-event effect (SEE), with the aim of enhancing the single-particle radiation resistance of N-type metal-oxide semiconductor field-effect transistors (MOSFETs). It proposes a design for a Si-based device structure t...
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| Format: | Article |
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MDPI AG
2024-01-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/15/2/229 |
| _version_ | 1797297454482194432 |
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| author | Weifeng Liu Zhirou Zhou Dong Zhang Jianjun Song |
| author_facet | Weifeng Liu Zhirou Zhou Dong Zhang Jianjun Song |
| author_sort | Weifeng Liu |
| collection | DOAJ |
| description | This paper thoroughly analyses the role of drift in the sensitive region in the single-event effect (SEE), with the aim of enhancing the single-particle radiation resistance of N-type metal-oxide semiconductor field-effect transistors (MOSFETs). It proposes a design for a Si-based device structure that extends the lightly doped source–drain region of the N-channel metal-oxide semiconductor (NMOS), thereby moderating the electric field of the sensitive region. This design leads to a 15.69% decrease in the charge collected at the leaky end of the device under the standard irradiation conditions. On this basis, a device structure is further proposed to form a composite metal-oxide semiconductor (MOS) by connecting a pn junction at the lightly doped source–drain end. By adding two charge paths, the leakage collection charge is further reduced by 13.85% under standard irradiation conditions. Moreover, the deterioration of the drive current in the purely growing lightly doped source–drain region can be further improved. Simulations of single-event effects under different irradiation conditions show that the device has good resistance to single-event irradiation, and the composite MOS structure smoothly converges to a 14.65% reduction in drain collection charge between 0.2 pC/<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi mathvariant="sans-serif">μ</mi></semantics></math></inline-formula>m and 1 pC/<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi mathvariant="sans-serif">μ</mi></semantics></math></inline-formula>m Linear Energy Transfer (LET) values. The incidence position at the source-to-channel interface collects the highest charge reduction rate of 28.23%. The collecting charge reduction rate is maximum, at 17.12%, when the incidence is at a 45-degree angle towards the source. |
| first_indexed | 2024-03-07T22:20:33Z |
| format | Article |
| id | doaj.art-1c2209b3fa6d4004b1c71dbd5cf118e6 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-07T22:20:33Z |
| publishDate | 2024-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-1c2209b3fa6d4004b1c71dbd5cf118e62024-02-23T15:27:41ZengMDPI AGMicromachines2072-666X2024-01-0115222910.3390/mi15020229A New Type of Si-Based MOSFET for Radiation ReinforcementWeifeng Liu0Zhirou Zhou1Dong Zhang2Jianjun Song3State Key Discipline Laboratory of Wide Band-Gap Semiconductor Devices and Integrated Technology, School of Microelectronics, Xidian University, Xi’an 710071, ChinaState Key Discipline Laboratory of Wide Band-Gap Semiconductor Devices and Integrated Technology, School of Microelectronics, Xidian University, Xi’an 710071, ChinaState Key Discipline Laboratory of Wide Band-Gap Semiconductor Devices and Integrated Technology, School of Microelectronics, Xidian University, Xi’an 710071, ChinaState Key Discipline Laboratory of Wide Band-Gap Semiconductor Devices and Integrated Technology, School of Microelectronics, Xidian University, Xi’an 710071, ChinaThis paper thoroughly analyses the role of drift in the sensitive region in the single-event effect (SEE), with the aim of enhancing the single-particle radiation resistance of N-type metal-oxide semiconductor field-effect transistors (MOSFETs). It proposes a design for a Si-based device structure that extends the lightly doped source–drain region of the N-channel metal-oxide semiconductor (NMOS), thereby moderating the electric field of the sensitive region. This design leads to a 15.69% decrease in the charge collected at the leaky end of the device under the standard irradiation conditions. On this basis, a device structure is further proposed to form a composite metal-oxide semiconductor (MOS) by connecting a pn junction at the lightly doped source–drain end. By adding two charge paths, the leakage collection charge is further reduced by 13.85% under standard irradiation conditions. Moreover, the deterioration of the drive current in the purely growing lightly doped source–drain region can be further improved. Simulations of single-event effects under different irradiation conditions show that the device has good resistance to single-event irradiation, and the composite MOS structure smoothly converges to a 14.65% reduction in drain collection charge between 0.2 pC/<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi mathvariant="sans-serif">μ</mi></semantics></math></inline-formula>m and 1 pC/<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi mathvariant="sans-serif">μ</mi></semantics></math></inline-formula>m Linear Energy Transfer (LET) values. The incidence position at the source-to-channel interface collects the highest charge reduction rate of 28.23%. The collecting charge reduction rate is maximum, at 17.12%, when the incidence is at a 45-degree angle towards the source.https://www.mdpi.com/2072-666X/15/2/229single-event effectradiation-hardenedheavy ionMOS devices |
| spellingShingle | Weifeng Liu Zhirou Zhou Dong Zhang Jianjun Song A New Type of Si-Based MOSFET for Radiation Reinforcement Micromachines single-event effect radiation-hardened heavy ion MOS devices |
| title | A New Type of Si-Based MOSFET for Radiation Reinforcement |
| title_full | A New Type of Si-Based MOSFET for Radiation Reinforcement |
| title_fullStr | A New Type of Si-Based MOSFET for Radiation Reinforcement |
| title_full_unstemmed | A New Type of Si-Based MOSFET for Radiation Reinforcement |
| title_short | A New Type of Si-Based MOSFET for Radiation Reinforcement |
| title_sort | new type of si based mosfet for radiation reinforcement |
| topic | single-event effect radiation-hardened heavy ion MOS devices |
| url | https://www.mdpi.com/2072-666X/15/2/229 |
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