First-Principles Prediction of New 2D <i>p</i>-SiPN: A Wide Bandgap Semiconductor

Pentagonal two-dimensional ternary sheets are an emerging class of materials because of their novel characteristic and wide range of applications. In this work, we use first-principles density functional theory (DFT) calculations to identify a new pentagonal SiPN, <i>p</i>-SiPN, which is...

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Main Authors: Shambhu Bhandari Sharma, Issam Qattan, Santosh KC, Sufian Abedrabbo
Format: Article
Language:English
Published: MDPI AG 2022-11-01
Series:Nanomaterials
Subjects:
Online Access:https://www.mdpi.com/2079-4991/12/22/4068
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author Shambhu Bhandari Sharma
Issam Qattan
Santosh KC
Sufian Abedrabbo
author_facet Shambhu Bhandari Sharma
Issam Qattan
Santosh KC
Sufian Abedrabbo
author_sort Shambhu Bhandari Sharma
collection DOAJ
description Pentagonal two-dimensional ternary sheets are an emerging class of materials because of their novel characteristic and wide range of applications. In this work, we use first-principles density functional theory (DFT) calculations to identify a new pentagonal SiPN, <i>p</i>-SiPN, which is geometrically, thermodynamically, dynamically, and mechanically stable, and has promising experimental potential. The new <i>p</i>-SiPN shows an indirect bandgap semiconducting behavior that is highly tunable with applied equ-biaxial strain. It is mechanically isotropic, along the x-y in-plane direction, and is a soft material possessing high elasticity and ultimate strain. In addition, its exceptional anisotropic optical response with strong UV light absorbance, and small reflectivity and electron energy loss make it a potential material for optoelectronics and nanomechanics.
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spelling doaj.art-1c2a580d2d9a49da9e37c794295c12092023-11-24T09:29:09ZengMDPI AGNanomaterials2079-49912022-11-011222406810.3390/nano12224068First-Principles Prediction of New 2D <i>p</i>-SiPN: A Wide Bandgap SemiconductorShambhu Bhandari Sharma0Issam Qattan1Santosh KC2Sufian Abedrabbo3Department of Physics, Khalifa University of Science and Technology, Abu Dhabi P.O. Box 127788, United Arab EmiratesDepartment of Physics, Khalifa University of Science and Technology, Abu Dhabi P.O. Box 127788, United Arab EmiratesChemical and Materials Engineering, San Jose State University, San Jose, CA 95112, USADepartment of Physics, Khalifa University of Science and Technology, Abu Dhabi P.O. Box 127788, United Arab EmiratesPentagonal two-dimensional ternary sheets are an emerging class of materials because of their novel characteristic and wide range of applications. In this work, we use first-principles density functional theory (DFT) calculations to identify a new pentagonal SiPN, <i>p</i>-SiPN, which is geometrically, thermodynamically, dynamically, and mechanically stable, and has promising experimental potential. The new <i>p</i>-SiPN shows an indirect bandgap semiconducting behavior that is highly tunable with applied equ-biaxial strain. It is mechanically isotropic, along the x-y in-plane direction, and is a soft material possessing high elasticity and ultimate strain. In addition, its exceptional anisotropic optical response with strong UV light absorbance, and small reflectivity and electron energy loss make it a potential material for optoelectronics and nanomechanics.https://www.mdpi.com/2079-4991/12/22/4068ab-initiodensity functional theorystrain modulationelastic propertieselectronic propertiesoptical properties
spellingShingle Shambhu Bhandari Sharma
Issam Qattan
Santosh KC
Sufian Abedrabbo
First-Principles Prediction of New 2D <i>p</i>-SiPN: A Wide Bandgap Semiconductor
Nanomaterials
ab-initio
density functional theory
strain modulation
elastic properties
electronic properties
optical properties
title First-Principles Prediction of New 2D <i>p</i>-SiPN: A Wide Bandgap Semiconductor
title_full First-Principles Prediction of New 2D <i>p</i>-SiPN: A Wide Bandgap Semiconductor
title_fullStr First-Principles Prediction of New 2D <i>p</i>-SiPN: A Wide Bandgap Semiconductor
title_full_unstemmed First-Principles Prediction of New 2D <i>p</i>-SiPN: A Wide Bandgap Semiconductor
title_short First-Principles Prediction of New 2D <i>p</i>-SiPN: A Wide Bandgap Semiconductor
title_sort first principles prediction of new 2d i p i sipn a wide bandgap semiconductor
topic ab-initio
density functional theory
strain modulation
elastic properties
electronic properties
optical properties
url https://www.mdpi.com/2079-4991/12/22/4068
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AT issamqattan firstprinciplespredictionofnew2dipisipnawidebandgapsemiconductor
AT santoshkc firstprinciplespredictionofnew2dipisipnawidebandgapsemiconductor
AT sufianabedrabbo firstprinciplespredictionofnew2dipisipnawidebandgapsemiconductor