Preparation and characterisation of Al-doped ZnO and PVDF composites
A single organic composite material having high dielectric constant is difficult to meet the needs of the market. Nowadays, polymer matrix-based composites have become a promising option that researchers are focusing on. Al-doped zinc oxide (ZnO) and composites containing ZnO as reinforcement and po...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2016-11-01
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| Series: | High Voltage |
| Subjects: | |
| Online Access: | https://digital-library.theiet.org/content/journals/10.1049/hve.2016.0057 |
| _version_ | 1818426749424238592 |
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| author | Ju Peihai Weng Ling Liu Lizhu Zhang Xiaorui |
| author_facet | Ju Peihai Weng Ling Liu Lizhu Zhang Xiaorui |
| author_sort | Ju Peihai |
| collection | DOAJ |
| description | A single organic composite material having high dielectric constant is difficult to meet the needs of the market. Nowadays, polymer matrix-based composites have become a promising option that researchers are focusing on. Al-doped zinc oxide (ZnO) and composites containing ZnO as reinforcement and poly(vinylidene fluoride) (PVDF) as matrix were prepared. The microstructure of composites was analysed by scanning electron microscope and transmission electron microscopy techniques. The chemical structures and crystallisation behaviour of the materials were investigated by the means of FT-IR and X-ray diffractometer. ZnO, having both rod- and sheet-shaped, was evenly distributed within the PVDF material. Additionally, the dielectric properties and breakdown field strength of composite were tested. As the content of the fillers was kept steady, the dielectric constant of the composite material increased proportionally with the Al content. Thus, a composite containing 10% ZnO with 7% Al displayed a dielectric constant of 18.5 at 100 Hz, twice when compared with the pure ZnO/PVDF composites. This phenomenon was attributed to ZnO semiconductor properties which can significantly improve the conductive nature of the materials. |
| first_indexed | 2024-12-14T14:34:47Z |
| format | Article |
| id | doaj.art-1c7f010f94b841b4999bd33a2a073f30 |
| institution | Directory Open Access Journal |
| issn | 2397-7264 |
| language | English |
| last_indexed | 2024-12-14T14:34:47Z |
| publishDate | 2016-11-01 |
| publisher | Wiley |
| record_format | Article |
| series | High Voltage |
| spelling | doaj.art-1c7f010f94b841b4999bd33a2a073f302022-12-21T22:57:41ZengWileyHigh Voltage2397-72642016-11-0110.1049/hve.2016.0057HVE.2016.0057Preparation and characterisation of Al-doped ZnO and PVDF compositesJu Peihai0Weng Ling1Liu Lizhu2Zhang Xiaorui3Harbin University of Science and TechnologyHarbin University of Science and TechnologyHarbin University of Science and TechnologyHarbin University of Science and TechnologyA single organic composite material having high dielectric constant is difficult to meet the needs of the market. Nowadays, polymer matrix-based composites have become a promising option that researchers are focusing on. Al-doped zinc oxide (ZnO) and composites containing ZnO as reinforcement and poly(vinylidene fluoride) (PVDF) as matrix were prepared. The microstructure of composites was analysed by scanning electron microscope and transmission electron microscopy techniques. The chemical structures and crystallisation behaviour of the materials were investigated by the means of FT-IR and X-ray diffractometer. ZnO, having both rod- and sheet-shaped, was evenly distributed within the PVDF material. Additionally, the dielectric properties and breakdown field strength of composite were tested. As the content of the fillers was kept steady, the dielectric constant of the composite material increased proportionally with the Al content. Thus, a composite containing 10% ZnO with 7% Al displayed a dielectric constant of 18.5 at 100 Hz, twice when compared with the pure ZnO/PVDF composites. This phenomenon was attributed to ZnO semiconductor properties which can significantly improve the conductive nature of the materials.https://digital-library.theiet.org/content/journals/10.1049/hve.2016.0057filled polymerszinc compoundsII-VI semiconductorswide band gap semiconductorspermittivitygrain sizescanning electron microscopytransmission electron microscopychemical structureelectric breakdownX-ray diffractionFourier transform infrared spectraPVDFsingle organic composite materialdielectric constantpolymer matrix-based compositesaluminium-doped zinc oxidepoly(vinylidene fluoride)microstructuretransmission electron microscopyscanning electron microscopychemical structurescrystallisation behaviourX-ray diffractometryFTIRbreakdown field strengthdielectric propertiessemiconductor propertiesZnO:Al |
| spellingShingle | Ju Peihai Weng Ling Liu Lizhu Zhang Xiaorui Preparation and characterisation of Al-doped ZnO and PVDF composites High Voltage filled polymers zinc compounds II-VI semiconductors wide band gap semiconductors permittivity grain size scanning electron microscopy transmission electron microscopy chemical structure electric breakdown X-ray diffraction Fourier transform infrared spectra PVDF single organic composite material dielectric constant polymer matrix-based composites aluminium-doped zinc oxide poly(vinylidene fluoride) microstructure transmission electron microscopy scanning electron microscopy chemical structures crystallisation behaviour X-ray diffractometry FTIR breakdown field strength dielectric properties semiconductor properties ZnO:Al |
| title | Preparation and characterisation of Al-doped ZnO and PVDF composites |
| title_full | Preparation and characterisation of Al-doped ZnO and PVDF composites |
| title_fullStr | Preparation and characterisation of Al-doped ZnO and PVDF composites |
| title_full_unstemmed | Preparation and characterisation of Al-doped ZnO and PVDF composites |
| title_short | Preparation and characterisation of Al-doped ZnO and PVDF composites |
| title_sort | preparation and characterisation of al doped zno and pvdf composites |
| topic | filled polymers zinc compounds II-VI semiconductors wide band gap semiconductors permittivity grain size scanning electron microscopy transmission electron microscopy chemical structure electric breakdown X-ray diffraction Fourier transform infrared spectra PVDF single organic composite material dielectric constant polymer matrix-based composites aluminium-doped zinc oxide poly(vinylidene fluoride) microstructure transmission electron microscopy scanning electron microscopy chemical structures crystallisation behaviour X-ray diffractometry FTIR breakdown field strength dielectric properties semiconductor properties ZnO:Al |
| url | https://digital-library.theiet.org/content/journals/10.1049/hve.2016.0057 |
| work_keys_str_mv | AT jupeihai preparationandcharacterisationofaldopedznoandpvdfcomposites AT wengling preparationandcharacterisationofaldopedznoandpvdfcomposites AT liulizhu preparationandcharacterisationofaldopedznoandpvdfcomposites AT zhangxiaorui preparationandcharacterisationofaldopedznoandpvdfcomposites |