Variability Improvement of TiOx/Al2O3 Bilayer Nonvolatile Resistive Switching Devices by Interfacial Band Engineering with an Ultrathin Al2O3 Dielectric Material
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
American Chemical Society
2017-10-01
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| Series: | ACS Omega |
| Online Access: | http://dx.doi.org/10.1021/acsomega.7b01211 |
| _version_ | 1818413020088369152 |
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| author | Writam Banerjee Xiaoxin Xu Hangbing Lv Qi Liu Shibing Long Ming Liu |
| author_facet | Writam Banerjee Xiaoxin Xu Hangbing Lv Qi Liu Shibing Long Ming Liu |
| author_sort | Writam Banerjee |
| collection | DOAJ |
| first_indexed | 2024-12-14T10:56:33Z |
| format | Article |
| id | doaj.art-1c8b9038393c43eba7fb48a363994f83 |
| institution | Directory Open Access Journal |
| issn | 2470-1343 |
| language | English |
| last_indexed | 2024-12-14T10:56:33Z |
| publishDate | 2017-10-01 |
| publisher | American Chemical Society |
| record_format | Article |
| series | ACS Omega |
| spelling | doaj.art-1c8b9038393c43eba7fb48a363994f832022-12-21T23:04:53ZengAmerican Chemical SocietyACS Omega2470-13432017-10-012106888689510.1021/acsomega.7b01211Variability Improvement of TiOx/Al2O3 Bilayer Nonvolatile Resistive Switching Devices by Interfacial Band Engineering with an Ultrathin Al2O3 Dielectric MaterialWritam Banerjee0Xiaoxin Xu1Hangbing Lv2Qi Liu3Shibing Long4Ming Liu5Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, ChinaKey Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, ChinaKey Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, ChinaKey Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, ChinaKey Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, ChinaKey Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, Chinahttp://dx.doi.org/10.1021/acsomega.7b01211 |
| spellingShingle | Writam Banerjee Xiaoxin Xu Hangbing Lv Qi Liu Shibing Long Ming Liu Variability Improvement of TiOx/Al2O3 Bilayer Nonvolatile Resistive Switching Devices by Interfacial Band Engineering with an Ultrathin Al2O3 Dielectric Material ACS Omega |
| title | Variability Improvement of TiOx/Al2O3 Bilayer Nonvolatile Resistive Switching Devices by Interfacial Band Engineering with an Ultrathin Al2O3 Dielectric Material |
| title_full | Variability Improvement of TiOx/Al2O3 Bilayer Nonvolatile Resistive Switching Devices by Interfacial Band Engineering with an Ultrathin Al2O3 Dielectric Material |
| title_fullStr | Variability Improvement of TiOx/Al2O3 Bilayer Nonvolatile Resistive Switching Devices by Interfacial Band Engineering with an Ultrathin Al2O3 Dielectric Material |
| title_full_unstemmed | Variability Improvement of TiOx/Al2O3 Bilayer Nonvolatile Resistive Switching Devices by Interfacial Band Engineering with an Ultrathin Al2O3 Dielectric Material |
| title_short | Variability Improvement of TiOx/Al2O3 Bilayer Nonvolatile Resistive Switching Devices by Interfacial Band Engineering with an Ultrathin Al2O3 Dielectric Material |
| title_sort | variability improvement of tiox al2o3 bilayer nonvolatile resistive switching devices by interfacial band engineering with an ultrathin al2o3 dielectric material |
| url | http://dx.doi.org/10.1021/acsomega.7b01211 |
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