Variability Improvement of TiOx/Al2O3 Bilayer Nonvolatile Resistive Switching Devices by Interfacial Band Engineering with an Ultrathin Al2O3 Dielectric Material

Bibliographic Details
Main Authors: Writam Banerjee, Xiaoxin Xu, Hangbing Lv, Qi Liu, Shibing Long, Ming Liu
Format: Article
Language:English
Published: American Chemical Society 2017-10-01
Series:ACS Omega
Online Access:http://dx.doi.org/10.1021/acsomega.7b01211