Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications
Abstract In this study, we have demonstrated the potential of InGaN-based red micro-LEDs with single quantum well (SQW) structure for visible light communication applications. Our findings indicate the SQW sample has a better crystal quality, with high-purity emission, a narrower full width at half...
| Main Authors: | , , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Springer
2023-07-01
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| Series: | Discover Nano |
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| Online Access: | https://doi.org/10.1186/s11671-023-03871-z |
| _version_ | 1797769348385865728 |
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| author | Fu-He Hsiao Tzu-Yi Lee Wen-Chien Miao Yi-Hua Pai Daisuke Iida Chun-Liang Lin Fang-Chung Chen Chi-Wai Chow Chien-Chung Lin Ray-Hua Horng Jr-Hau He Kazuhiro Ohkawa Yu-Heng Hong Chiao-Yun Chang Hao-Chung Kuo |
| author_facet | Fu-He Hsiao Tzu-Yi Lee Wen-Chien Miao Yi-Hua Pai Daisuke Iida Chun-Liang Lin Fang-Chung Chen Chi-Wai Chow Chien-Chung Lin Ray-Hua Horng Jr-Hau He Kazuhiro Ohkawa Yu-Heng Hong Chiao-Yun Chang Hao-Chung Kuo |
| author_sort | Fu-He Hsiao |
| collection | DOAJ |
| description | Abstract In this study, we have demonstrated the potential of InGaN-based red micro-LEDs with single quantum well (SQW) structure for visible light communication applications. Our findings indicate the SQW sample has a better crystal quality, with high-purity emission, a narrower full width at half maximum, and higher internal quantum efficiency, compared to InGaN red micro-LED with a double quantum wells (DQWs) structure. The InGaN red micro-LED with SQW structure exhibits a higher maximum external quantum efficiency of 5.95% and experiences less blueshift as the current density increases when compared to the DQWs device. Furthermore, the SQW device has a superior modulation bandwidth of 424 MHz with a data transmission rate of 800 Mbit/s at an injection current density of 2000 A/cm2. These results demonstrate that InGaN-based SQW red micro-LEDs hold great promise for realizing full-color micro-display and visible light communication applications. |
| first_indexed | 2024-03-12T21:06:39Z |
| format | Article |
| id | doaj.art-1c937b553b27442eae8d8d6f5af126e8 |
| institution | Directory Open Access Journal |
| issn | 2731-9229 |
| language | English |
| last_indexed | 2024-03-12T21:06:39Z |
| publishDate | 2023-07-01 |
| publisher | Springer |
| record_format | Article |
| series | Discover Nano |
| spelling | doaj.art-1c937b553b27442eae8d8d6f5af126e82023-07-30T11:22:45ZengSpringerDiscover Nano2731-92292023-07-0118111110.1186/s11671-023-03871-zInvestigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applicationsFu-He Hsiao0Tzu-Yi Lee1Wen-Chien Miao2Yi-Hua Pai3Daisuke Iida4Chun-Liang Lin5Fang-Chung Chen6Chi-Wai Chow7Chien-Chung Lin8Ray-Hua Horng9Jr-Hau He10Kazuhiro Ohkawa11Yu-Heng Hong12Chiao-Yun Chang13Hao-Chung Kuo14Semiconductor Research Center, Hon Hai Research InstituteDepartment of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung UniversitySemiconductor Research Center, Hon Hai Research InstituteDepartment of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung UniversityComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science and Technology (KAUST)Department of Electrophysics, College of Science, National Yang Ming Chiao Tung UniversityDepartment of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung UniversityDepartment of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung UniversityDepartment of Electrical Engineering, National Taiwan UniversityInstitute of Electronics, National Yang Ming Chiao Tung UniversityDepartment of Materials Science and Engineering, City University of Hong KongComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science and Technology (KAUST)Semiconductor Research Center, Hon Hai Research InstituteDepartment of Electrical Engineering, National Taiwan Ocean UniversitySemiconductor Research Center, Hon Hai Research InstituteAbstract In this study, we have demonstrated the potential of InGaN-based red micro-LEDs with single quantum well (SQW) structure for visible light communication applications. Our findings indicate the SQW sample has a better crystal quality, with high-purity emission, a narrower full width at half maximum, and higher internal quantum efficiency, compared to InGaN red micro-LED with a double quantum wells (DQWs) structure. The InGaN red micro-LED with SQW structure exhibits a higher maximum external quantum efficiency of 5.95% and experiences less blueshift as the current density increases when compared to the DQWs device. Furthermore, the SQW device has a superior modulation bandwidth of 424 MHz with a data transmission rate of 800 Mbit/s at an injection current density of 2000 A/cm2. These results demonstrate that InGaN-based SQW red micro-LEDs hold great promise for realizing full-color micro-display and visible light communication applications.https://doi.org/10.1186/s11671-023-03871-zMicro-LEDRed InGaN-based LEDVisible light communication |
| spellingShingle | Fu-He Hsiao Tzu-Yi Lee Wen-Chien Miao Yi-Hua Pai Daisuke Iida Chun-Liang Lin Fang-Chung Chen Chi-Wai Chow Chien-Chung Lin Ray-Hua Horng Jr-Hau He Kazuhiro Ohkawa Yu-Heng Hong Chiao-Yun Chang Hao-Chung Kuo Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications Discover Nano Micro-LED Red InGaN-based LED Visible light communication |
| title | Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications |
| title_full | Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications |
| title_fullStr | Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications |
| title_full_unstemmed | Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications |
| title_short | Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications |
| title_sort | investigations on the high performance of ingan red micro leds with single quantum well for visible light communication applications |
| topic | Micro-LED Red InGaN-based LED Visible light communication |
| url | https://doi.org/10.1186/s11671-023-03871-z |
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