Spin filtering effect in all-van der Waals heterostructures with WSe2 barriers
Abstract Exploiting the spin degree of freedom to store and manipulate information provides a paradigm for future microelectronics. The development of van der Waals (vdW) heterostructures has created a fascinating platform for exploring spintronic properties in the two-dimensional (2D) limit. Transi...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2022-09-01
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| Series: | npj 2D Materials and Applications |
| Online Access: | https://doi.org/10.1038/s41699-022-00339-z |
| _version_ | 1798003173964644352 |
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| author | Yuanhui Zheng Xiaolei Ma Faguang Yan Hailong Lin Wenkai Zhu Yang Ji Runsheng Wang Kaiyou Wang |
| author_facet | Yuanhui Zheng Xiaolei Ma Faguang Yan Hailong Lin Wenkai Zhu Yang Ji Runsheng Wang Kaiyou Wang |
| author_sort | Yuanhui Zheng |
| collection | DOAJ |
| description | Abstract Exploiting the spin degree of freedom to store and manipulate information provides a paradigm for future microelectronics. The development of van der Waals (vdW) heterostructures has created a fascinating platform for exploring spintronic properties in the two-dimensional (2D) limit. Transition-metal dichalcogenides such as tungsten diselenide (WSe2) have electronic band structures that are ideal for hosting many exotic spin–orbit phenomena. Here, we report the spin-filtering effect in all-vdW heterostructures with WSe2 barrier. Combining 2D-perpendicular magnetic anisotropy Fe3GeTe2 (FGT) with different thicknesses of WSe2, the FGT/WSe2/FGT spin valve shows distinct charge and spin transport behavior. Moreover, the negative magnetoresistance (−4.3%) could be inverted into positive magnetoresistance (up to +25.8%) with decreasing the WSe2 thickness. Furthermore, we proposed a spin-filtering model based on Δ-symmetry electrons tunneling to explain the crossover from negative to positive MR signal through ab initio calculation. These experimental and theoretical results illustrate the rich potential of the families of TMDC materials to control spin currents in 2D spintronic devices. |
| first_indexed | 2024-04-11T12:03:43Z |
| format | Article |
| id | doaj.art-1c9605dc797c4d12886f725deb211952 |
| institution | Directory Open Access Journal |
| issn | 2397-7132 |
| language | English |
| last_indexed | 2024-04-11T12:03:43Z |
| publishDate | 2022-09-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | npj 2D Materials and Applications |
| spelling | doaj.art-1c9605dc797c4d12886f725deb2119522022-12-22T04:24:47ZengNature Portfolionpj 2D Materials and Applications2397-71322022-09-01611710.1038/s41699-022-00339-zSpin filtering effect in all-van der Waals heterostructures with WSe2 barriersYuanhui Zheng0Xiaolei Ma1Faguang Yan2Hailong Lin3Wenkai Zhu4Yang Ji5Runsheng Wang6Kaiyou Wang7Beijing Academy of Quantum Information SciencesSchool of Integrated Circuits, Peking UniversityState Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of SciencesState Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of SciencesState Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of SciencesState Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of SciencesSchool of Integrated Circuits, Peking UniversityBeijing Academy of Quantum Information SciencesAbstract Exploiting the spin degree of freedom to store and manipulate information provides a paradigm for future microelectronics. The development of van der Waals (vdW) heterostructures has created a fascinating platform for exploring spintronic properties in the two-dimensional (2D) limit. Transition-metal dichalcogenides such as tungsten diselenide (WSe2) have electronic band structures that are ideal for hosting many exotic spin–orbit phenomena. Here, we report the spin-filtering effect in all-vdW heterostructures with WSe2 barrier. Combining 2D-perpendicular magnetic anisotropy Fe3GeTe2 (FGT) with different thicknesses of WSe2, the FGT/WSe2/FGT spin valve shows distinct charge and spin transport behavior. Moreover, the negative magnetoresistance (−4.3%) could be inverted into positive magnetoresistance (up to +25.8%) with decreasing the WSe2 thickness. Furthermore, we proposed a spin-filtering model based on Δ-symmetry electrons tunneling to explain the crossover from negative to positive MR signal through ab initio calculation. These experimental and theoretical results illustrate the rich potential of the families of TMDC materials to control spin currents in 2D spintronic devices.https://doi.org/10.1038/s41699-022-00339-z |
| spellingShingle | Yuanhui Zheng Xiaolei Ma Faguang Yan Hailong Lin Wenkai Zhu Yang Ji Runsheng Wang Kaiyou Wang Spin filtering effect in all-van der Waals heterostructures with WSe2 barriers npj 2D Materials and Applications |
| title | Spin filtering effect in all-van der Waals heterostructures with WSe2 barriers |
| title_full | Spin filtering effect in all-van der Waals heterostructures with WSe2 barriers |
| title_fullStr | Spin filtering effect in all-van der Waals heterostructures with WSe2 barriers |
| title_full_unstemmed | Spin filtering effect in all-van der Waals heterostructures with WSe2 barriers |
| title_short | Spin filtering effect in all-van der Waals heterostructures with WSe2 barriers |
| title_sort | spin filtering effect in all van der waals heterostructures with wse2 barriers |
| url | https://doi.org/10.1038/s41699-022-00339-z |
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