InP/InGaAs/AlGaAs quantum-well semiconductor laser with an InP based 1550 nm n-GaAsSb single waveguide structure
A n-GaAsSb single waveguide layer semiconductor laser with an InP/In0.55Ga0.45As/AlGaAs asymmetrical barrier is designed in order to improve output power, which not only reduces optical loss in the p-region but also effectively suppresses carrier leakage. The results show that a GaAsSb single wavegu...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2023-07-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0158496 |
| _version_ | 1827878555593211904 |
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| author | Zhian Ning Hailiang Dong Zhigang Jia Wei Jia Jian Liang Bingshe Xu |
| author_facet | Zhian Ning Hailiang Dong Zhigang Jia Wei Jia Jian Liang Bingshe Xu |
| author_sort | Zhian Ning |
| collection | DOAJ |
| description | A n-GaAsSb single waveguide layer semiconductor laser with an InP/In0.55Ga0.45As/AlGaAs asymmetrical barrier is designed in order to improve output power, which not only reduces optical loss in the p-region but also effectively suppresses carrier leakage. The results show that a GaAsSb single waveguide structure almost completely shifts the optical field to the n-region, which reduces the absorption of photons by holes. When the injected current is 1 A, the device’s optical loss decreases from 15.60 to 13.20 cm−1. Ensuring that carrier leakage and internal quantum efficiency are almost unaffected, the InP/In0.55Ga0.45As/AlGaAs asymmetric barrier makes optical loss further reduce. The power of the new-structure device is 0.74 W, and its wall-plug efficiency reaches 70.84%. This structure design will provide both experimental data and theoretical support for the growth of the epitaxial structure of InP-based 1550 nm semiconductor lasers. |
| first_indexed | 2024-03-12T17:53:16Z |
| format | Article |
| id | doaj.art-1c9633376e844421bed548a4c2132045 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-03-12T17:53:16Z |
| publishDate | 2023-07-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-1c9633376e844421bed548a4c21320452023-08-02T20:06:09ZengAIP Publishing LLCAIP Advances2158-32262023-07-01137075109075109-710.1063/5.0158496InP/InGaAs/AlGaAs quantum-well semiconductor laser with an InP based 1550 nm n-GaAsSb single waveguide structureZhian Ning0Hailiang Dong1Zhigang Jia2Wei Jia3Jian Liang4Bingshe Xu5Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan, Shanxi 030024, People’s Republic of ChinaKey Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan, Shanxi 030024, People’s Republic of ChinaKey Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan, Shanxi 030024, People’s Republic of ChinaKey Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan, Shanxi 030024, People’s Republic of ChinaCollege of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan, Shanxi 030024, People’s Republic of ChinaKey Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan, Shanxi 030024, People’s Republic of ChinaA n-GaAsSb single waveguide layer semiconductor laser with an InP/In0.55Ga0.45As/AlGaAs asymmetrical barrier is designed in order to improve output power, which not only reduces optical loss in the p-region but also effectively suppresses carrier leakage. The results show that a GaAsSb single waveguide structure almost completely shifts the optical field to the n-region, which reduces the absorption of photons by holes. When the injected current is 1 A, the device’s optical loss decreases from 15.60 to 13.20 cm−1. Ensuring that carrier leakage and internal quantum efficiency are almost unaffected, the InP/In0.55Ga0.45As/AlGaAs asymmetric barrier makes optical loss further reduce. The power of the new-structure device is 0.74 W, and its wall-plug efficiency reaches 70.84%. This structure design will provide both experimental data and theoretical support for the growth of the epitaxial structure of InP-based 1550 nm semiconductor lasers.http://dx.doi.org/10.1063/5.0158496 |
| spellingShingle | Zhian Ning Hailiang Dong Zhigang Jia Wei Jia Jian Liang Bingshe Xu InP/InGaAs/AlGaAs quantum-well semiconductor laser with an InP based 1550 nm n-GaAsSb single waveguide structure AIP Advances |
| title | InP/InGaAs/AlGaAs quantum-well semiconductor laser with an InP based 1550 nm n-GaAsSb single waveguide structure |
| title_full | InP/InGaAs/AlGaAs quantum-well semiconductor laser with an InP based 1550 nm n-GaAsSb single waveguide structure |
| title_fullStr | InP/InGaAs/AlGaAs quantum-well semiconductor laser with an InP based 1550 nm n-GaAsSb single waveguide structure |
| title_full_unstemmed | InP/InGaAs/AlGaAs quantum-well semiconductor laser with an InP based 1550 nm n-GaAsSb single waveguide structure |
| title_short | InP/InGaAs/AlGaAs quantum-well semiconductor laser with an InP based 1550 nm n-GaAsSb single waveguide structure |
| title_sort | inp ingaas algaas quantum well semiconductor laser with an inp based 1550 nm n gaassb single waveguide structure |
| url | http://dx.doi.org/10.1063/5.0158496 |
| work_keys_str_mv | AT zhianning inpingaasalgaasquantumwellsemiconductorlaserwithaninpbased1550nmngaassbsinglewaveguidestructure AT hailiangdong inpingaasalgaasquantumwellsemiconductorlaserwithaninpbased1550nmngaassbsinglewaveguidestructure AT zhigangjia inpingaasalgaasquantumwellsemiconductorlaserwithaninpbased1550nmngaassbsinglewaveguidestructure AT weijia inpingaasalgaasquantumwellsemiconductorlaserwithaninpbased1550nmngaassbsinglewaveguidestructure AT jianliang inpingaasalgaasquantumwellsemiconductorlaserwithaninpbased1550nmngaassbsinglewaveguidestructure AT bingshexu inpingaasalgaasquantumwellsemiconductorlaserwithaninpbased1550nmngaassbsinglewaveguidestructure |