Electrical breakdown of carbon nanotube devices and the predictability of breakdown position
We have investigated electrical transport properties of long (>10 μm) multiwalled carbon nanotubes (NTs) by dividing individuals into several segments of identical length. Each segment has different resistance because of the random distribution of defect density in an NT and is corroborated by Ra...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2012-06-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4720426 |
| _version_ | 1818210857938583552 |
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| author | Gopal Krishna Goswami Karuna Kar Nanda |
| author_facet | Gopal Krishna Goswami Karuna Kar Nanda |
| author_sort | Gopal Krishna Goswami |
| collection | DOAJ |
| description | We have investigated electrical transport properties of long (>10 μm) multiwalled carbon nanotubes (NTs) by dividing individuals into several segments of identical length. Each segment has different resistance because of the random distribution of defect density in an NT and is corroborated by Raman studies. Higher is the resistance, lower is the current required to break the segments indicating that breakdown occurs at the highly resistive segment/site and not necessarily at the middle. This is consistent with the one-dimensional thermal transport model. We have demonstrated the healing of defects by annealing at moderate temperatures or by current annealing. To strengthen our mechanism, we have carried out electrical breakdown of nitrogen doped NTs (NNTs) with diameter variation from one end to the other. It reveals that the electrical breakdown occurs selectively at the narrower diameter region. Overall, we believe that our results will help to predict the breakdown position of both semiconducting and metallic NTs. |
| first_indexed | 2024-12-12T05:23:17Z |
| format | Article |
| id | doaj.art-1ca1e80a93664cfa95138b5ff45edfb5 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-12T05:23:17Z |
| publishDate | 2012-06-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-1ca1e80a93664cfa95138b5ff45edfb52022-12-22T00:36:33ZengAIP Publishing LLCAIP Advances2158-32262012-06-0122022129022129-810.1063/1.4720426029202ADVElectrical breakdown of carbon nanotube devices and the predictability of breakdown positionGopal Krishna Goswami0Karuna Kar Nanda1Materials Research Centre, Indian Institute of Science, Bangalore-560012, IndiaMaterials Research Centre, Indian Institute of Science, Bangalore-560012, IndiaWe have investigated electrical transport properties of long (>10 μm) multiwalled carbon nanotubes (NTs) by dividing individuals into several segments of identical length. Each segment has different resistance because of the random distribution of defect density in an NT and is corroborated by Raman studies. Higher is the resistance, lower is the current required to break the segments indicating that breakdown occurs at the highly resistive segment/site and not necessarily at the middle. This is consistent with the one-dimensional thermal transport model. We have demonstrated the healing of defects by annealing at moderate temperatures or by current annealing. To strengthen our mechanism, we have carried out electrical breakdown of nitrogen doped NTs (NNTs) with diameter variation from one end to the other. It reveals that the electrical breakdown occurs selectively at the narrower diameter region. Overall, we believe that our results will help to predict the breakdown position of both semiconducting and metallic NTs.http://dx.doi.org/10.1063/1.4720426 |
| spellingShingle | Gopal Krishna Goswami Karuna Kar Nanda Electrical breakdown of carbon nanotube devices and the predictability of breakdown position AIP Advances |
| title | Electrical breakdown of carbon nanotube devices and the predictability of breakdown position |
| title_full | Electrical breakdown of carbon nanotube devices and the predictability of breakdown position |
| title_fullStr | Electrical breakdown of carbon nanotube devices and the predictability of breakdown position |
| title_full_unstemmed | Electrical breakdown of carbon nanotube devices and the predictability of breakdown position |
| title_short | Electrical breakdown of carbon nanotube devices and the predictability of breakdown position |
| title_sort | electrical breakdown of carbon nanotube devices and the predictability of breakdown position |
| url | http://dx.doi.org/10.1063/1.4720426 |
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