Improved Endurance of Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Using Laminated-Structure Interlayer
In this article, the endurance characteristic of the TiN/HZO/TiN capacitor was improved by the laminated structure of a ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> thin film. Altering the HZO deposition ratio, the laminated-structure interlayer was...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-05-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/13/10/1608 |
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| author | Meiwen Chen Shuxian Lv Boping Wang Pengfei Jiang Yuanxiang Chen Yaxin Ding Yuan Wang Yuting Chen Yan Wang |
| author_facet | Meiwen Chen Shuxian Lv Boping Wang Pengfei Jiang Yuanxiang Chen Yaxin Ding Yuan Wang Yuting Chen Yan Wang |
| author_sort | Meiwen Chen |
| collection | DOAJ |
| description | In this article, the endurance characteristic of the TiN/HZO/TiN capacitor was improved by the laminated structure of a ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> thin film. Altering the HZO deposition ratio, the laminated-structure interlayer was formed in the middle of the HZO film. Although small remanent polarization reduction was observed in the capacitor with a laminated structure, the endurance characteristic was improved by two orders of magnitude (from 10<sup>6</sup> to 10<sup>8</sup> cycles). Moreover, the leakage current of the TiN/HZO/TiN capacitor with the laminated-structure interlayer was reduced by one order of magnitude. The reliability enhancement was proved by the Time-Dependent Dielectric Breakdown (TDDB) test, and the optimization results were attributed to the migration inhibition and nonuniform distribution of oxygen vacancies. Without additional materials and a complicated process, the laminated-structure method provides a feasible strategy for improving HZO device reliability. |
| first_indexed | 2024-03-11T03:26:08Z |
| format | Article |
| id | doaj.art-1cc8ce8acf0944b4b78bc5e73a47ad3a |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-11T03:26:08Z |
| publishDate | 2023-05-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-1cc8ce8acf0944b4b78bc5e73a47ad3a2023-11-18T02:42:10ZengMDPI AGNanomaterials2079-49912023-05-011310160810.3390/nano13101608Improved Endurance of Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Using Laminated-Structure InterlayerMeiwen Chen0Shuxian Lv1Boping Wang2Pengfei Jiang3Yuanxiang Chen4Yaxin Ding5Yuan Wang6Yuting Chen7Yan Wang8Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, ChinaKey Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, ChinaKey Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, ChinaKey Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, ChinaKey Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, ChinaKey Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, ChinaKey Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, ChinaKey Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, ChinaKey Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, ChinaIn this article, the endurance characteristic of the TiN/HZO/TiN capacitor was improved by the laminated structure of a ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> thin film. Altering the HZO deposition ratio, the laminated-structure interlayer was formed in the middle of the HZO film. Although small remanent polarization reduction was observed in the capacitor with a laminated structure, the endurance characteristic was improved by two orders of magnitude (from 10<sup>6</sup> to 10<sup>8</sup> cycles). Moreover, the leakage current of the TiN/HZO/TiN capacitor with the laminated-structure interlayer was reduced by one order of magnitude. The reliability enhancement was proved by the Time-Dependent Dielectric Breakdown (TDDB) test, and the optimization results were attributed to the migration inhibition and nonuniform distribution of oxygen vacancies. Without additional materials and a complicated process, the laminated-structure method provides a feasible strategy for improving HZO device reliability.https://www.mdpi.com/2079-4991/13/10/1608ferroelectricsZrO<sub>2</sub>–HfO<sub>2</sub>interlayerlaminated structureendurancereliability |
| spellingShingle | Meiwen Chen Shuxian Lv Boping Wang Pengfei Jiang Yuanxiang Chen Yaxin Ding Yuan Wang Yuting Chen Yan Wang Improved Endurance of Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Using Laminated-Structure Interlayer Nanomaterials ferroelectrics ZrO<sub>2</sub>–HfO<sub>2</sub> interlayer laminated structure endurance reliability |
| title | Improved Endurance of Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Using Laminated-Structure Interlayer |
| title_full | Improved Endurance of Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Using Laminated-Structure Interlayer |
| title_fullStr | Improved Endurance of Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Using Laminated-Structure Interlayer |
| title_full_unstemmed | Improved Endurance of Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Using Laminated-Structure Interlayer |
| title_short | Improved Endurance of Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Using Laminated-Structure Interlayer |
| title_sort | improved endurance of ferroelectric hf sub 0 5 sub zr sub 0 5 sub o sub 2 sub using laminated structure interlayer |
| topic | ferroelectrics ZrO<sub>2</sub>–HfO<sub>2</sub> interlayer laminated structure endurance reliability |
| url | https://www.mdpi.com/2079-4991/13/10/1608 |
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