Zero-Field ODMR and relaxation of Si-vacancy centers in 6H-SiC
Silicon vacancies in silicon carbide (SiC) have been proposed as interesting candidates for quantum technology applications such as quantum sensing and quantum repeaters. SiC exists in many polytypes with different plane stacking sequences, and in each polytype, the vacancies can occupy a variety of...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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IOP Publishing
2023-01-01
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| Series: | Materials Research Express |
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| Online Access: | https://doi.org/10.1088/2053-1591/ad0935 |
| _version_ | 1797627516862595072 |
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| author | Harpreet Singh Andrey N Anisimov Pavel G Baranov Dieter Suter |
| author_facet | Harpreet Singh Andrey N Anisimov Pavel G Baranov Dieter Suter |
| author_sort | Harpreet Singh |
| collection | DOAJ |
| description | Silicon vacancies in silicon carbide (SiC) have been proposed as interesting candidates for quantum technology applications such as quantum sensing and quantum repeaters. SiC exists in many polytypes with different plane stacking sequences, and in each polytype, the vacancies can occupy a variety of different lattice sites. In this work, we focus on the three important charged silicon vacancies in the 6 H -SiC polytype. We record the photoluminescence and continuous-wave optically detected magnetic resonance (ODMR) spectra at different radio-frequency power levels and different temperatures. We individually select the zero-phonon lines of the different silicon vacancies at low temperatures and record the corresponding ODMR spectra. ODMR allows us to correlate optical and magnetic resonance spectra and thereby separate signals from V _1 and V _3 . The results also explain the observed sign change of the ODMR signal as a function of temperature. |
| first_indexed | 2024-03-11T10:25:24Z |
| format | Article |
| id | doaj.art-1ccff658c15a446eb07a9f4216a2bec7 |
| institution | Directory Open Access Journal |
| issn | 2053-1591 |
| language | English |
| last_indexed | 2024-03-11T10:25:24Z |
| publishDate | 2023-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Materials Research Express |
| spelling | doaj.art-1ccff658c15a446eb07a9f4216a2bec72023-11-15T13:40:04ZengIOP PublishingMaterials Research Express2053-15912023-01-01101111620110.1088/2053-1591/ad0935Zero-Field ODMR and relaxation of Si-vacancy centers in 6H-SiCHarpreet Singh0https://orcid.org/0000-0002-7505-4850Andrey N Anisimov1https://orcid.org/0000-0003-2171-7943Pavel G Baranov2https://orcid.org/0000-0003-1955-9245Dieter Suter3https://orcid.org/0000-0002-7349-3032Fakultät Physik, Technische Universität Dortmund , D-44221 Dortmund, GermanyFakultät Physik, Technische Universität Dortmund , D-44221 Dortmund, GermanyIoffe Institute , St. Petersburg 194021, RussiaFakultät Physik, Technische Universität Dortmund , D-44221 Dortmund, GermanySilicon vacancies in silicon carbide (SiC) have been proposed as interesting candidates for quantum technology applications such as quantum sensing and quantum repeaters. SiC exists in many polytypes with different plane stacking sequences, and in each polytype, the vacancies can occupy a variety of different lattice sites. In this work, we focus on the three important charged silicon vacancies in the 6 H -SiC polytype. We record the photoluminescence and continuous-wave optically detected magnetic resonance (ODMR) spectra at different radio-frequency power levels and different temperatures. We individually select the zero-phonon lines of the different silicon vacancies at low temperatures and record the corresponding ODMR spectra. ODMR allows us to correlate optical and magnetic resonance spectra and thereby separate signals from V _1 and V _3 . The results also explain the observed sign change of the ODMR signal as a function of temperature.https://doi.org/10.1088/2053-1591/ad0935silicon vacancysilicon carbideODMRtemperature dependend ODMR |
| spellingShingle | Harpreet Singh Andrey N Anisimov Pavel G Baranov Dieter Suter Zero-Field ODMR and relaxation of Si-vacancy centers in 6H-SiC Materials Research Express silicon vacancy silicon carbide ODMR temperature dependend ODMR |
| title | Zero-Field ODMR and relaxation of Si-vacancy centers in 6H-SiC |
| title_full | Zero-Field ODMR and relaxation of Si-vacancy centers in 6H-SiC |
| title_fullStr | Zero-Field ODMR and relaxation of Si-vacancy centers in 6H-SiC |
| title_full_unstemmed | Zero-Field ODMR and relaxation of Si-vacancy centers in 6H-SiC |
| title_short | Zero-Field ODMR and relaxation of Si-vacancy centers in 6H-SiC |
| title_sort | zero field odmr and relaxation of si vacancy centers in 6h sic |
| topic | silicon vacancy silicon carbide ODMR temperature dependend ODMR |
| url | https://doi.org/10.1088/2053-1591/ad0935 |
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