Zero-Field ODMR and relaxation of Si-vacancy centers in 6H-SiC

Zero-Field ODMR and relaxation of Si-vacancy centers in 6H-SiC

Silicon vacancies in silicon carbide (SiC) have been proposed as interesting candidates for quantum technology applications such as quantum sensing and quantum repeaters. SiC exists in many polytypes with different plane stacking sequences, and in each polytype, the vacancies can occupy a variety of...

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Bibliographic Details
Main Authors: Harpreet Singh, Andrey N Anisimov, Pavel G Baranov, Dieter Suter
Format: Article
Language:English
Published: IOP Publishing 2023-01-01
Series:Materials Research Express
Subjects:
silicon vacancy
silicon carbide
ODMR
temperature dependend ODMR
Online Access:https://doi.org/10.1088/2053-1591/ad0935

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