Synergistically Enhanced Performance and Reliability of Abrupt Metal‐Oxide Heterojunction Transistor
Abstract The large‐area low‐temperature processing capability and versatile characteristics of amorphous oxide semiconductor (AOS) thin‐film transistors (TFTs) are highly expected to promote the developments of next‐generation displays, 3D integrated circuit (3DIC), flexible chips, and electronics....
| Những tác giả chính: | , , , , , , , , |
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| Định dạng: | Bài viết |
| Ngôn ngữ: | English |
| Được phát hành: |
Wiley-VCH
2023-01-01
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| Loạt: | Advanced Electronic Materials |
| Những chủ đề: | |
| Truy cập trực tuyến: | https://doi.org/10.1002/aelm.202200807 |