Synergistically Enhanced Performance and Reliability of Abrupt Metal‐Oxide Heterojunction Transistor

Synergistically Enhanced Performance and Reliability of Abrupt Metal‐Oxide Heterojunction Transistor

Abstract The large‐area low‐temperature processing capability and versatile characteristics of amorphous oxide semiconductor (AOS) thin‐film transistors (TFTs) are highly expected to promote the developments of next‐generation displays, 3D integrated circuit (3DIC), flexible chips, and electronics....

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Bibliographic Details
Main Authors:	Pengfei Wang, Huan Yang, Jiye Li, Xiaohui Zhang, Lei Wang, Juncheng Xiao, Bin Zhao, Shengdong Zhang, Lei Lu
Format:	Article
Language:	English
Published:	Wiley-VCH 2023-01-01
Series:	Advanced Electronic Materials
Subjects:	amorphous oxide semiconductors (AOSs) heterojunction interface sharpening mobility stability thin‐film transistors (TFTs)
Online Access:	https://doi.org/10.1002/aelm.202200807

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