The Optimizing Effect of Nitrogen Flow Ratio on the Homoepitaxial Growth of 4H-SiC Layers
In this study, a 4H-SiC homoepitaxial layer was grown on a 150 mm 4° off-axis substrate using a horizontal hot-wall CVD reactor. The research aimed to investigate the impact of varying the C/Si ratio and temperature while also changing the N<sub>2</sub> flow rate and N<sub>2</su...
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MDPI AG
2023-06-01
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| Online Access: | https://www.mdpi.com/2073-4352/13/6/935 |
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| author | Weilong Yuan Yicheng Pei Ning Guo Yunkai Li Xiuhai Zhang Xingfang Liu |
| author_facet | Weilong Yuan Yicheng Pei Ning Guo Yunkai Li Xiuhai Zhang Xingfang Liu |
| author_sort | Weilong Yuan |
| collection | DOAJ |
| description | In this study, a 4H-SiC homoepitaxial layer was grown on a 150 mm 4° off-axis substrate using a horizontal hot-wall CVD reactor. The research aimed to investigate the impact of varying the C/Si ratio and temperature while also changing the N<sub>2</sub> flow rate and N<sub>2</sub> flow ratio on the growth rate (thickness), doping, surface roughness, and uniformity of the large-size 4H-SiC epitaxial layer. The results indicate that the growth rate and thickness uniformity of the film increases with an increase in the C/Si ratio. Additionally, adjusting the N<sub>2</sub> flow rate in a timely manner based on the change in the C/Si ratio is crucial to achieving the best epitaxial layer doping concentration and uniformity. The study found that, as the temperature increases, the film thickness and thickness uniformity also increase. The maximum thickness recorded was 6.2 μm, while the minimum thickness uniformity was 1.44% at 1570 °C. Additionally, the surface roughness reached its lowest point at 0.81 nm at 1570 °C. To compensate for the difference in thickness and doping concentration caused by temperature distribution and uneven airflow, the N<sub>2</sub> flow ratio was altered. In particular, at a growth temperature of 1570 °C, a N<sub>2</sub> flow ratio of 1.78 can improve the uniformity of doping by 4.12%. |
| first_indexed | 2024-03-11T02:35:32Z |
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| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-11T02:35:32Z |
| publishDate | 2023-06-01 |
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| series | Crystals |
| spelling | doaj.art-1d1b14cb7ea742bf8d214f340966afeb2023-11-18T09:56:48ZengMDPI AGCrystals2073-43522023-06-0113693510.3390/cryst13060935The Optimizing Effect of Nitrogen Flow Ratio on the Homoepitaxial Growth of 4H-SiC LayersWeilong Yuan0Yicheng Pei1Ning Guo2Yunkai Li3Xiuhai Zhang4Xingfang Liu5School of Resources, Environment and Materials, Guangxi University, Nanning 530004, ChinaSchool of Resources, Environment and Materials, Guangxi University, Nanning 530004, ChinaKey Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaKey Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaSchool of Resources, Environment and Materials, Guangxi University, Nanning 530004, ChinaKey Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaIn this study, a 4H-SiC homoepitaxial layer was grown on a 150 mm 4° off-axis substrate using a horizontal hot-wall CVD reactor. The research aimed to investigate the impact of varying the C/Si ratio and temperature while also changing the N<sub>2</sub> flow rate and N<sub>2</sub> flow ratio on the growth rate (thickness), doping, surface roughness, and uniformity of the large-size 4H-SiC epitaxial layer. The results indicate that the growth rate and thickness uniformity of the film increases with an increase in the C/Si ratio. Additionally, adjusting the N<sub>2</sub> flow rate in a timely manner based on the change in the C/Si ratio is crucial to achieving the best epitaxial layer doping concentration and uniformity. The study found that, as the temperature increases, the film thickness and thickness uniformity also increase. The maximum thickness recorded was 6.2 μm, while the minimum thickness uniformity was 1.44% at 1570 °C. Additionally, the surface roughness reached its lowest point at 0.81 nm at 1570 °C. To compensate for the difference in thickness and doping concentration caused by temperature distribution and uneven airflow, the N<sub>2</sub> flow ratio was altered. In particular, at a growth temperature of 1570 °C, a N<sub>2</sub> flow ratio of 1.78 can improve the uniformity of doping by 4.12%.https://www.mdpi.com/2073-4352/13/6/9354H-SiC homoepitaxial layerCVDN<sub>2</sub> flow rateN<sub>2</sub> flow ratioC/Si ratiogrowth temperature |
| spellingShingle | Weilong Yuan Yicheng Pei Ning Guo Yunkai Li Xiuhai Zhang Xingfang Liu The Optimizing Effect of Nitrogen Flow Ratio on the Homoepitaxial Growth of 4H-SiC Layers Crystals 4H-SiC homoepitaxial layer CVD N<sub>2</sub> flow rate N<sub>2</sub> flow ratio C/Si ratio growth temperature |
| title | The Optimizing Effect of Nitrogen Flow Ratio on the Homoepitaxial Growth of 4H-SiC Layers |
| title_full | The Optimizing Effect of Nitrogen Flow Ratio on the Homoepitaxial Growth of 4H-SiC Layers |
| title_fullStr | The Optimizing Effect of Nitrogen Flow Ratio on the Homoepitaxial Growth of 4H-SiC Layers |
| title_full_unstemmed | The Optimizing Effect of Nitrogen Flow Ratio on the Homoepitaxial Growth of 4H-SiC Layers |
| title_short | The Optimizing Effect of Nitrogen Flow Ratio on the Homoepitaxial Growth of 4H-SiC Layers |
| title_sort | optimizing effect of nitrogen flow ratio on the homoepitaxial growth of 4h sic layers |
| topic | 4H-SiC homoepitaxial layer CVD N<sub>2</sub> flow rate N<sub>2</sub> flow ratio C/Si ratio growth temperature |
| url | https://www.mdpi.com/2073-4352/13/6/935 |
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