Recognition of dislocation structure of silicon carbide epitaxial layers by а neural network
Technological features of the growth of single crystal silicon carbide inevitably create condi-tions for the formation of crystal structure defects in them. A method is proposed for recognizing and analyzing a dislocation structure of single crystal silicon carbide based on the use of optical micros...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Samara National Research University
2020-08-01
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| Series: | Компьютерная оптика |
| Subjects: | |
| Online Access: | http://computeroptics.smr.ru/KO/PDF/KO44-4/440420.pdf |