Protective capping of topological surface states of intrinsically insulating Bi2Te3
We have identified epitaxially grown elemental Te as a capping material that is suited to protect the topological surface states of intrinsically insulating Bi2Te3. By using angle-resolved photoemission, we were able to show that the Te overlayer leaves the dispersive bands of the surface states int...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4931038 |
| _version_ | 1819045816750309376 |
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| author | Katharina Hoefer Christoph Becker Steffen Wirth Liu Hao Tjeng |
| author_facet | Katharina Hoefer Christoph Becker Steffen Wirth Liu Hao Tjeng |
| author_sort | Katharina Hoefer |
| collection | DOAJ |
| description | We have identified epitaxially grown elemental Te as a capping material that is suited to protect the topological surface states of intrinsically insulating Bi2Te3. By using angle-resolved photoemission, we were able to show that the Te overlayer leaves the dispersive bands of the surface states intact and that it does not alter the chemical potential of the Bi2Te3 thin film. From in-situ four-point contact measurements, we observed that the conductivity of the capped film is still mainly determined by the metallic surface states and that the contribution of the capping layer is minor. Moreover, the Te overlayer can be annealed away in vacuum to produce a clean Bi2Te3 surface in its pristine state even after the exposure of the capped film to air. Our findings will facilitate well-defined and reliable ex-situ experiments on the properties of Bi2Te3 surface states with nontrivial topology. |
| first_indexed | 2024-12-21T10:34:35Z |
| format | Article |
| id | doaj.art-1d4c8fdda1434f9994871b06fdd3d9d8 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-21T10:34:35Z |
| publishDate | 2015-09-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-1d4c8fdda1434f9994871b06fdd3d9d82022-12-21T19:07:06ZengAIP Publishing LLCAIP Advances2158-32262015-09-0159097139097139-610.1063/1.4931038039509ADVProtective capping of topological surface states of intrinsically insulating Bi2Te3Katharina Hoefer0Christoph Becker1Steffen Wirth2Liu Hao Tjeng3 Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Strasse 40, Dresden 01187, Germany Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Strasse 40, Dresden 01187, Germany Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Strasse 40, Dresden 01187, Germany Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Strasse 40, Dresden 01187, GermanyWe have identified epitaxially grown elemental Te as a capping material that is suited to protect the topological surface states of intrinsically insulating Bi2Te3. By using angle-resolved photoemission, we were able to show that the Te overlayer leaves the dispersive bands of the surface states intact and that it does not alter the chemical potential of the Bi2Te3 thin film. From in-situ four-point contact measurements, we observed that the conductivity of the capped film is still mainly determined by the metallic surface states and that the contribution of the capping layer is minor. Moreover, the Te overlayer can be annealed away in vacuum to produce a clean Bi2Te3 surface in its pristine state even after the exposure of the capped film to air. Our findings will facilitate well-defined and reliable ex-situ experiments on the properties of Bi2Te3 surface states with nontrivial topology.http://dx.doi.org/10.1063/1.4931038 |
| spellingShingle | Katharina Hoefer Christoph Becker Steffen Wirth Liu Hao Tjeng Protective capping of topological surface states of intrinsically insulating Bi2Te3 AIP Advances |
| title | Protective capping of topological surface states of intrinsically insulating Bi2Te3 |
| title_full | Protective capping of topological surface states of intrinsically insulating Bi2Te3 |
| title_fullStr | Protective capping of topological surface states of intrinsically insulating Bi2Te3 |
| title_full_unstemmed | Protective capping of topological surface states of intrinsically insulating Bi2Te3 |
| title_short | Protective capping of topological surface states of intrinsically insulating Bi2Te3 |
| title_sort | protective capping of topological surface states of intrinsically insulating bi2te3 |
| url | http://dx.doi.org/10.1063/1.4931038 |
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