Preliminary investigation of dry tribochemical mechanical polishing of single crystal SiC substrates

Preliminary investigation of dry tribochemical mechanical polishing of single crystal SiC substrates

Aiming at the issues of low efficiency, high cost, and environmental pollution associated with silicon carbide (SiC) substrates in the polishing process, a method of tribochemical mechanical polishing of SiC substrates in the dry state (Dry Tribochemical Mechanical Polishing, DTCMP) is proposed. The...

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Bibliographic Details
Main Authors: Mingpu XUE, Wen XIAO, Zongtang LI, Zhankui WANG, Jianxiu SU
Format: Article
Language:zho
Published: Zhengzhou Research Institute for Abrasives & Grinding Co., Ltd. 2024-02-01
Series:Jin'gangshi yu moliao moju gongcheng
Subjects:
sic substrate
dry tribochemical mechanical polishing
material removal rate
surface roughness
Online Access:http://www.jgszz.cn/article/doi/10.13394/j.cnki.jgszz.2023.0052

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