High-speed and high-precision PbSe/PbI2 solution process mid-infrared camera
Abstract Infrared (IR) cameras based on semiconductors grown by epitaxial methods face two main challenges, which are cost and operating at room temperature. The alternative new technologies which can tackle these two difficulties develop new and facile material and methods. Moreover, the implementa...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2021-01-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-020-80847-4 |
| _version_ | 1818840886015950848 |
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| author | Hannaneh Dortaj Mahboubeh Dolatyari Armin Zarghami Farid Alidoust Ali Rostami Samiye Matloub Reza Yadipour |
| author_facet | Hannaneh Dortaj Mahboubeh Dolatyari Armin Zarghami Farid Alidoust Ali Rostami Samiye Matloub Reza Yadipour |
| author_sort | Hannaneh Dortaj |
| collection | DOAJ |
| description | Abstract Infrared (IR) cameras based on semiconductors grown by epitaxial methods face two main challenges, which are cost and operating at room temperature. The alternative new technologies which can tackle these two difficulties develop new and facile material and methods. Moreover, the implementation of high speed camera, which makes high resolution images with normal methods, is very expensive. In this paper, a new nanostructure based on a cost-effective solution processed technology for the implementation of the high-speed mid-infrared light camera at room temperature is proposed. To this end, the chemically synthesized PbSe–PbI2 core–shell Quantum Dots (QDs) are used. In this work, a camera including 10 × 10 pixels is fabricated and synthesized QDs spin-coated on interdigitated contact (IDC) and then the fabricated system passivated by epoxy resin. Finally, using an electronic reading circuit, all pixels are converted to an image on the monitor. To model the fabricated camera, we solved Schrodinger–Poisson equations self consistently. Then output current from each pixel is modeled based on semiconductor physics and dark and photocurrent, as well as Responsivity and Detectivity, are calculated. Then the fabricated device is examined, and dark and photocurrents are measured and compared to the theoretical results. The obtained results indicate that the obtained theoretical and measured experimental results are in good agreement together. The fabricated detector is high speed with a rise time of 100 ns. With this speed, we can get 10 million frames per second; this means we can get very high-resolution images. The speed of operation is examined experimentally using a chopper that modulates input light with 50, 100, 250, and 500 Hz. It is shown that the fabricated device operates well in these situations, and it is not limited by the speed of detector. Finally, for the demonstration of the proposed device operation, some pictures and movies taken by the camera are attached and inserted in the paper. |
| first_indexed | 2024-12-19T04:17:18Z |
| format | Article |
| id | doaj.art-1ddb72b0dc7542778e9867dec1464797 |
| institution | Directory Open Access Journal |
| issn | 2045-2322 |
| language | English |
| last_indexed | 2024-12-19T04:17:18Z |
| publishDate | 2021-01-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj.art-1ddb72b0dc7542778e9867dec14647972022-12-21T20:36:15ZengNature PortfolioScientific Reports2045-23222021-01-0111111110.1038/s41598-020-80847-4High-speed and high-precision PbSe/PbI2 solution process mid-infrared cameraHannaneh Dortaj0Mahboubeh Dolatyari1Armin Zarghami2Farid Alidoust3Ali Rostami4Samiye Matloub5Reza Yadipour6Photonics and Nanocrystals Research Lab (PNRL), University of TabrizSP-EPT Lab., ASEPE Company, Industrial Park of Advanced TechnologiesPhotonics and Nanocrystals Research Lab (PNRL), University of TabrizPhotonics and Nanocrystals Research Lab (PNRL), University of TabrizPhotonics and Nanocrystals Research Lab (PNRL), University of TabrizQuantum Photonics Research Lab (QPRL), University of TabrizFaculty of Electrical and Computer Engineering, University of TabrizAbstract Infrared (IR) cameras based on semiconductors grown by epitaxial methods face two main challenges, which are cost and operating at room temperature. The alternative new technologies which can tackle these two difficulties develop new and facile material and methods. Moreover, the implementation of high speed camera, which makes high resolution images with normal methods, is very expensive. In this paper, a new nanostructure based on a cost-effective solution processed technology for the implementation of the high-speed mid-infrared light camera at room temperature is proposed. To this end, the chemically synthesized PbSe–PbI2 core–shell Quantum Dots (QDs) are used. In this work, a camera including 10 × 10 pixels is fabricated and synthesized QDs spin-coated on interdigitated contact (IDC) and then the fabricated system passivated by epoxy resin. Finally, using an electronic reading circuit, all pixels are converted to an image on the monitor. To model the fabricated camera, we solved Schrodinger–Poisson equations self consistently. Then output current from each pixel is modeled based on semiconductor physics and dark and photocurrent, as well as Responsivity and Detectivity, are calculated. Then the fabricated device is examined, and dark and photocurrents are measured and compared to the theoretical results. The obtained results indicate that the obtained theoretical and measured experimental results are in good agreement together. The fabricated detector is high speed with a rise time of 100 ns. With this speed, we can get 10 million frames per second; this means we can get very high-resolution images. The speed of operation is examined experimentally using a chopper that modulates input light with 50, 100, 250, and 500 Hz. It is shown that the fabricated device operates well in these situations, and it is not limited by the speed of detector. Finally, for the demonstration of the proposed device operation, some pictures and movies taken by the camera are attached and inserted in the paper.https://doi.org/10.1038/s41598-020-80847-4 |
| spellingShingle | Hannaneh Dortaj Mahboubeh Dolatyari Armin Zarghami Farid Alidoust Ali Rostami Samiye Matloub Reza Yadipour High-speed and high-precision PbSe/PbI2 solution process mid-infrared camera Scientific Reports |
| title | High-speed and high-precision PbSe/PbI2 solution process mid-infrared camera |
| title_full | High-speed and high-precision PbSe/PbI2 solution process mid-infrared camera |
| title_fullStr | High-speed and high-precision PbSe/PbI2 solution process mid-infrared camera |
| title_full_unstemmed | High-speed and high-precision PbSe/PbI2 solution process mid-infrared camera |
| title_short | High-speed and high-precision PbSe/PbI2 solution process mid-infrared camera |
| title_sort | high speed and high precision pbse pbi2 solution process mid infrared camera |
| url | https://doi.org/10.1038/s41598-020-80847-4 |
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