Investigation of a new low cost and low consumption single poly-silicon memory
In this paper is presented an investigation on a new low cost and voltage consumption single poly-silicon memory cell for passive RFID (Radio Frequency IDentification)applications. This structure is low cost due to its single poly-silicon design. This memory cell has two particularities : the first...
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| Format: | Article |
| Language: | English |
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International Institute of Informatics and Cybernetics
2010-10-01
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| Series: | Journal of Systemics, Cybernetics and Informatics |
| Subjects: | |
| Online Access: | http://www.iiisci.org/Journal/CV$/sci/pdfs/XF929CJ.pdf
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| _version_ | 1819150431376375808 |
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| author | Patrick Calenzo Jean-René Raguet Romain Laffont Rachid Bouchakour Philippe Boivin Pascal Fornara Stephan Niel |
| author_facet | Patrick Calenzo Jean-René Raguet Romain Laffont Rachid Bouchakour Philippe Boivin Pascal Fornara Stephan Niel |
| author_sort | Patrick Calenzo |
| collection | DOAJ |
| description | In this paper is presented an investigation on a new low cost and voltage consumption single poly-silicon memory cell for passive RFID (Radio Frequency IDentification)applications. This structure is low cost due to its single poly-silicon design. This memory cell has two particularities : the first one is that no deported capacitor is necessary to program this cell which allows to reduce the structure size to 1.1μm². The second one is the way the cell is erased. A Zener diode is used to generate carriers in order to be injected into the floating gate. This Zener diode is one of the key points for the functionality that has to be validated with some electrical trials. These trials permit to integrate and use the Zener diodes measured in simulations of the complete memory cell. This is done to validate the best candidate between the Zener diodes used for the cell and highlight the efficiency in consumption and rapidity to erase the cell. Besides, the writing and the reading cases are simulated in order to show the low consumption required by the cell during these phases. |
| first_indexed | 2024-12-22T14:17:24Z |
| format | Article |
| id | doaj.art-1df88237094d45928816b9654a76822f |
| institution | Directory Open Access Journal |
| issn | 1690-4524 |
| language | English |
| last_indexed | 2024-12-22T14:17:24Z |
| publishDate | 2010-10-01 |
| publisher | International Institute of Informatics and Cybernetics |
| record_format | Article |
| series | Journal of Systemics, Cybernetics and Informatics |
| spelling | doaj.art-1df88237094d45928816b9654a76822f2022-12-21T18:23:04ZengInternational Institute of Informatics and CyberneticsJournal of Systemics, Cybernetics and Informatics1690-45242010-10-01851216Investigation of a new low cost and low consumption single poly-silicon memoryPatrick Calenzo0Jean-René Raguet1Romain Laffont2Rachid Bouchakour3Philippe Boivin4Pascal Fornara5Stephan Niel6 Université Aix-Marseille / STMicroelectronics Université Aix-Marseille / STMicroelectronics Université Aix-Marseille Université Aix-Marseille STMicroelectronics STMicroelectronics STMicroelectronics In this paper is presented an investigation on a new low cost and voltage consumption single poly-silicon memory cell for passive RFID (Radio Frequency IDentification)applications. This structure is low cost due to its single poly-silicon design. This memory cell has two particularities : the first one is that no deported capacitor is necessary to program this cell which allows to reduce the structure size to 1.1μm². The second one is the way the cell is erased. A Zener diode is used to generate carriers in order to be injected into the floating gate. This Zener diode is one of the key points for the functionality that has to be validated with some electrical trials. These trials permit to integrate and use the Zener diodes measured in simulations of the complete memory cell. This is done to validate the best candidate between the Zener diodes used for the cell and highlight the efficiency in consumption and rapidity to erase the cell. Besides, the writing and the reading cases are simulated in order to show the low consumption required by the cell during these phases.http://www.iiisci.org/Journal/CV$/sci/pdfs/XF929CJ.pdf Zener EffectLow CostLow ConsumptionSingle Poly-Silicon Memory |
| spellingShingle | Patrick Calenzo Jean-René Raguet Romain Laffont Rachid Bouchakour Philippe Boivin Pascal Fornara Stephan Niel Investigation of a new low cost and low consumption single poly-silicon memory Journal of Systemics, Cybernetics and Informatics Zener Effect Low Cost Low Consumption Single Poly-Silicon Memory |
| title | Investigation of a new low cost and low consumption single poly-silicon memory |
| title_full | Investigation of a new low cost and low consumption single poly-silicon memory |
| title_fullStr | Investigation of a new low cost and low consumption single poly-silicon memory |
| title_full_unstemmed | Investigation of a new low cost and low consumption single poly-silicon memory |
| title_short | Investigation of a new low cost and low consumption single poly-silicon memory |
| title_sort | investigation of a new low cost and low consumption single poly silicon memory |
| topic | Zener Effect Low Cost Low Consumption Single Poly-Silicon Memory |
| url | http://www.iiisci.org/Journal/CV$/sci/pdfs/XF929CJ.pdf
|
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