Contact research strategy for emerging molybdenum disulfide and other two-dimensional field-effect transistors
Layered two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) have been widely isolated, synthesized, and characterized recently. Numerous 2D materials are identified as the potential candidates as channel materials for future thin film technology due to their high mobility and...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2014-09-01
|
| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.4894198 |
| _version_ | 1830430747633123328 |
|---|---|
| author | Yuchen Du Lingming Yang Han Liu Peide D. Ye |
| author_facet | Yuchen Du Lingming Yang Han Liu Peide D. Ye |
| author_sort | Yuchen Du |
| collection | DOAJ |
| description | Layered two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) have been widely isolated, synthesized, and characterized recently. Numerous 2D materials are identified as the potential candidates as channel materials for future thin film technology due to their high mobility and the exhibiting bandgaps. While many TMD filed-effect transistors (FETs) have been widely demonstrated along with a significant progress to clearly understand the device physics, large contact resistance at metal/semiconductor interface still remain a challenge. From 2D device research point of view, how to minimize the Schottky barrier effects on contacts thus reduce the contact resistance of metals on 2D materials is very critical for the further development of the field. Here, we present a review of contact research on molybdenum disulfide and other TMD FETs from the fundamental understanding of metal-semiconductor interfaces on 2D materials. A clear contact research strategy on 2D semiconducting materials is developed for future high-performance 2D FETs with aggressively scaled dimensions. |
| first_indexed | 2024-12-21T01:55:37Z |
| format | Article |
| id | doaj.art-1e0fcb301587493f94e8e5b3c2d98906 |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-12-21T01:55:37Z |
| publishDate | 2014-09-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-1e0fcb301587493f94e8e5b3c2d989062022-12-21T19:19:47ZengAIP Publishing LLCAPL Materials2166-532X2014-09-0129092510092510-1010.1063/1.4894198013492APMContact research strategy for emerging molybdenum disulfide and other two-dimensional field-effect transistorsYuchen Du0Lingming Yang1Han Liu2Peide D. Ye3School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USASchool of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USASchool of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USASchool of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USALayered two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) have been widely isolated, synthesized, and characterized recently. Numerous 2D materials are identified as the potential candidates as channel materials for future thin film technology due to their high mobility and the exhibiting bandgaps. While many TMD filed-effect transistors (FETs) have been widely demonstrated along with a significant progress to clearly understand the device physics, large contact resistance at metal/semiconductor interface still remain a challenge. From 2D device research point of view, how to minimize the Schottky barrier effects on contacts thus reduce the contact resistance of metals on 2D materials is very critical for the further development of the field. Here, we present a review of contact research on molybdenum disulfide and other TMD FETs from the fundamental understanding of metal-semiconductor interfaces on 2D materials. A clear contact research strategy on 2D semiconducting materials is developed for future high-performance 2D FETs with aggressively scaled dimensions.http://dx.doi.org/10.1063/1.4894198 |
| spellingShingle | Yuchen Du Lingming Yang Han Liu Peide D. Ye Contact research strategy for emerging molybdenum disulfide and other two-dimensional field-effect transistors APL Materials |
| title | Contact research strategy for emerging molybdenum disulfide and other two-dimensional field-effect transistors |
| title_full | Contact research strategy for emerging molybdenum disulfide and other two-dimensional field-effect transistors |
| title_fullStr | Contact research strategy for emerging molybdenum disulfide and other two-dimensional field-effect transistors |
| title_full_unstemmed | Contact research strategy for emerging molybdenum disulfide and other two-dimensional field-effect transistors |
| title_short | Contact research strategy for emerging molybdenum disulfide and other two-dimensional field-effect transistors |
| title_sort | contact research strategy for emerging molybdenum disulfide and other two dimensional field effect transistors |
| url | http://dx.doi.org/10.1063/1.4894198 |
| work_keys_str_mv | AT yuchendu contactresearchstrategyforemergingmolybdenumdisulfideandothertwodimensionalfieldeffecttransistors AT lingmingyang contactresearchstrategyforemergingmolybdenumdisulfideandothertwodimensionalfieldeffecttransistors AT hanliu contactresearchstrategyforemergingmolybdenumdisulfideandothertwodimensionalfieldeffecttransistors AT peidedye contactresearchstrategyforemergingmolybdenumdisulfideandothertwodimensionalfieldeffecttransistors |