Effect of abrasive vibration on microstructure evolution and material removal of SiC CMP
To address issues related to abrasion, agglomeration, and the challenges of mechanical and chemical release during chemical mechanical polishing (CMP), a vibration-assisted CMP method is employed. Molecular dynamics simulation analyze the dynamic evolution of frequency, amplitude, and indentation de...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | zho |
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Zhengzhou Research Institute for Abrasives & Grinding Co., Ltd.
2024-02-01
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| Series: | Jin'gangshi yu moliao moju gongcheng |
| Subjects: | |
| Online Access: | http://www.jgszz.cn/article/doi/10.13394/j.cnki.jgszz.2023.0053 |
| _version_ | 1827314595726884864 |
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| author | Ailing TANG Zewei YUAN Meiling TANG Ying WANG |
| author_facet | Ailing TANG Zewei YUAN Meiling TANG Ying WANG |
| author_sort | Ailing TANG |
| collection | DOAJ |
| description | To address issues related to abrasion, agglomeration, and the challenges of mechanical and chemical release during chemical mechanical polishing (CMP), a vibration-assisted CMP method is employed. Molecular dynamics simulation analyze the dynamic evolution of frequency, amplitude, and indentation depth, along with the dicing speed of abrasive vibration on the workpiece's surface. It reveals the mechanism behind enhanced material removal and improved surface quality facilitated by vibration. The effectiveness and removal mechanism of vibration-assisted CMP are validated through process testing and surface composition analysis. The results show that atomic potential energy and temperature on the workpiece surface can be effectively improved by appropriately increasing vibration frequency, vibration amplitude, indentation depth, and abrasive particle cutting speed. Abrasive vibration contributes to increased atomic disorder on the workpiece surface, facilitating the participation of silicon carbide in oxidation reactions. This process results in the formation of an oxide layer, which is mechanically removed. Polishing tests and composition analyses also confirms that vibration can improve material removal rates by about 50.5% and improve the surface quality by about 25.4%. |
| first_indexed | 2024-04-24T22:38:45Z |
| format | Article |
| id | doaj.art-1e4ea9eece62437fb6be4431792260b0 |
| institution | Directory Open Access Journal |
| issn | 1006-852X |
| language | zho |
| last_indexed | 2024-04-24T22:38:45Z |
| publishDate | 2024-02-01 |
| publisher | Zhengzhou Research Institute for Abrasives & Grinding Co., Ltd. |
| record_format | Article |
| series | Jin'gangshi yu moliao moju gongcheng |
| spelling | doaj.art-1e4ea9eece62437fb6be4431792260b02024-03-19T06:49:40ZzhoZhengzhou Research Institute for Abrasives & Grinding Co., Ltd.Jin'gangshi yu moliao moju gongcheng1006-852X2024-02-0144110912210.13394/j.cnki.jgszz.2023.00532022-0053--TANGAILINGEffect of abrasive vibration on microstructure evolution and material removal of SiC CMPAiling TANG0Zewei YUAN1Meiling TANG2Ying WANG3School of Mechanical Engineering, Shenyang University of Technology, Shenyang 110870, ChinaSchool of Mechanical Engineering, Shenyang University of Technology, Shenyang 110870, ChinaSchool of Mechanical Engineering, Shenyang University of Technology, Shenyang 110870, ChinaSchool of Mechanical Engineering, Shenyang University of Technology, Shenyang 110870, ChinaTo address issues related to abrasion, agglomeration, and the challenges of mechanical and chemical release during chemical mechanical polishing (CMP), a vibration-assisted CMP method is employed. Molecular dynamics simulation analyze the dynamic evolution of frequency, amplitude, and indentation depth, along with the dicing speed of abrasive vibration on the workpiece's surface. It reveals the mechanism behind enhanced material removal and improved surface quality facilitated by vibration. The effectiveness and removal mechanism of vibration-assisted CMP are validated through process testing and surface composition analysis. The results show that atomic potential energy and temperature on the workpiece surface can be effectively improved by appropriately increasing vibration frequency, vibration amplitude, indentation depth, and abrasive particle cutting speed. Abrasive vibration contributes to increased atomic disorder on the workpiece surface, facilitating the participation of silicon carbide in oxidation reactions. This process results in the formation of an oxide layer, which is mechanically removed. Polishing tests and composition analyses also confirms that vibration can improve material removal rates by about 50.5% and improve the surface quality by about 25.4%.http://www.jgszz.cn/article/doi/10.13394/j.cnki.jgszz.2023.0053silicon carbidevibrationchemical mechanical polishing (cmp)molecular dynamics |
| spellingShingle | Ailing TANG Zewei YUAN Meiling TANG Ying WANG Effect of abrasive vibration on microstructure evolution and material removal of SiC CMP Jin'gangshi yu moliao moju gongcheng silicon carbide vibration chemical mechanical polishing (cmp) molecular dynamics |
| title | Effect of abrasive vibration on microstructure evolution and material removal of SiC CMP |
| title_full | Effect of abrasive vibration on microstructure evolution and material removal of SiC CMP |
| title_fullStr | Effect of abrasive vibration on microstructure evolution and material removal of SiC CMP |
| title_full_unstemmed | Effect of abrasive vibration on microstructure evolution and material removal of SiC CMP |
| title_short | Effect of abrasive vibration on microstructure evolution and material removal of SiC CMP |
| title_sort | effect of abrasive vibration on microstructure evolution and material removal of sic cmp |
| topic | silicon carbide vibration chemical mechanical polishing (cmp) molecular dynamics |
| url | http://www.jgszz.cn/article/doi/10.13394/j.cnki.jgszz.2023.0053 |
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