An electronic synaptic memory device based on four-cation mixed halide perovskite
Abstract Organic–Inorganic Halide Perovskites (OIHP) have attracted tremendous research interest due to their exceptional semiconducting properties in combination with their facile, solution-based manufacturing performed at low temperatures. Their device applications cover a wide range of domains, w...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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Springer
2022-11-01
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| Series: | Discover Materials |
| Online Access: | https://doi.org/10.1007/s43939-022-00032-4 |
| _version_ | 1798018374700105728 |
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| author | Michalis Loizos Konstantinos Rogdakis Emmanuel Kymakis |
| author_facet | Michalis Loizos Konstantinos Rogdakis Emmanuel Kymakis |
| author_sort | Michalis Loizos |
| collection | DOAJ |
| description | Abstract Organic–Inorganic Halide Perovskites (OIHP) have attracted tremendous research interest due to their exceptional semiconducting properties in combination with their facile, solution-based manufacturing performed at low temperatures. Their device applications cover a wide range of domains, while amongst them, photovoltaics is one of the most promising paths towards industrialization. The complex ionic character of perovskites offers a gigantic playground of new dynamic phenomena such as migration of ionic species and vacancies that are strongly coupled to electronic carriers. The interactions between ions and charge carriers are commonly tunable by electrical fields, light, and strain, opening the path for novel device concepts with emerging functionalities. Here, we study the synaptic properties of a four–cation RbCsFAMA perovskite device deployed across an inverted solar cell geometry, as an expansion of Rogdakis et al. Mater. Adv., 2022, 3, 7002 investigations. The device exhibits stable bipolar resistive switching behavior and operates in a low voltage window < ± 1 V, with a high resistance to low resistance state ratio of up to 105. We show that our device can emulate a wide variety of synaptic functions such as paired-pulse facilitation, long-term potentiation, long-term depression, spiking-rate-dependent plasticity, and spike-timing-dependent plasticity. |
| first_indexed | 2024-04-11T16:22:55Z |
| format | Article |
| id | doaj.art-1ede133d1c1c47cabe0da7105aaecd8a |
| institution | Directory Open Access Journal |
| issn | 2730-7727 |
| language | English |
| last_indexed | 2024-04-11T16:22:55Z |
| publishDate | 2022-11-01 |
| publisher | Springer |
| record_format | Article |
| series | Discover Materials |
| spelling | doaj.art-1ede133d1c1c47cabe0da7105aaecd8a2022-12-22T04:14:15ZengSpringerDiscover Materials2730-77272022-11-012111010.1007/s43939-022-00032-4An electronic synaptic memory device based on four-cation mixed halide perovskiteMichalis Loizos0Konstantinos Rogdakis1Emmanuel Kymakis2Department of Electrical & Computer Engineering, Hellenic Mediterranean University (HMU)Department of Electrical & Computer Engineering, Hellenic Mediterranean University (HMU)Department of Electrical & Computer Engineering, Hellenic Mediterranean University (HMU)Abstract Organic–Inorganic Halide Perovskites (OIHP) have attracted tremendous research interest due to their exceptional semiconducting properties in combination with their facile, solution-based manufacturing performed at low temperatures. Their device applications cover a wide range of domains, while amongst them, photovoltaics is one of the most promising paths towards industrialization. The complex ionic character of perovskites offers a gigantic playground of new dynamic phenomena such as migration of ionic species and vacancies that are strongly coupled to electronic carriers. The interactions between ions and charge carriers are commonly tunable by electrical fields, light, and strain, opening the path for novel device concepts with emerging functionalities. Here, we study the synaptic properties of a four–cation RbCsFAMA perovskite device deployed across an inverted solar cell geometry, as an expansion of Rogdakis et al. Mater. Adv., 2022, 3, 7002 investigations. The device exhibits stable bipolar resistive switching behavior and operates in a low voltage window < ± 1 V, with a high resistance to low resistance state ratio of up to 105. We show that our device can emulate a wide variety of synaptic functions such as paired-pulse facilitation, long-term potentiation, long-term depression, spiking-rate-dependent plasticity, and spike-timing-dependent plasticity.https://doi.org/10.1007/s43939-022-00032-4 |
| spellingShingle | Michalis Loizos Konstantinos Rogdakis Emmanuel Kymakis An electronic synaptic memory device based on four-cation mixed halide perovskite Discover Materials |
| title | An electronic synaptic memory device based on four-cation mixed halide perovskite |
| title_full | An electronic synaptic memory device based on four-cation mixed halide perovskite |
| title_fullStr | An electronic synaptic memory device based on four-cation mixed halide perovskite |
| title_full_unstemmed | An electronic synaptic memory device based on four-cation mixed halide perovskite |
| title_short | An electronic synaptic memory device based on four-cation mixed halide perovskite |
| title_sort | electronic synaptic memory device based on four cation mixed halide perovskite |
| url | https://doi.org/10.1007/s43939-022-00032-4 |
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