Strained Si<sub>0.2</sub>Ge<sub>0.8</sub>/Ge multilayer Stacks Epitaxially Grown on a Low-/High-Temperature Ge Buffer Layer and Selective Wet-Etching of Germanium

Strained Si<sub>0.2</sub>Ge<sub>0.8</sub>/Ge multilayer Stacks Epitaxially Grown on a Low-/High-Temperature Ge Buffer Layer and Selective Wet-Etching of Germanium

With the development of new designs and materials for nano-scale transistors, vertical Gate-All-Around Field Effect Transistors (vGAAFETs) with germanium as channel materials have emerged as excellent choices. The driving forces for this choice are the full control of the short channel effect and th...

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Bibliographic Details
Main Authors: Lu Xie, Huilong Zhu, Yongkui Zhang, Xuezheng Ai, Guilei Wang, Junjie Li, Anyan Du, Zhenzhen Kong, Xiaogen Yin, Chen Li, Liheng Zhao, Yangyang Li, Kunpeng Jia, Ben Li, Henry H. Radamson
Format: Article
Language:English
Published: MDPI AG 2020-08-01
Series:Nanomaterials
Subjects:
vertical Gate-All-Around (vGAA)
high-quality Si<sub>0.2</sub>Ge<sub>0.8</sub>/Ge stack
selective etching of germanium
Online Access:https://www.mdpi.com/2079-4991/10/9/1715

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