Screening study on high power IGBT
This paper presents the modelling of some high power IGBT (Insulated Gate Bipolar Transistor) performances. These IGBT are essential components of the power converter in railway applications. Modelling methodology used in this study is design of experiments (DOE). The number of test in this kind of...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
EDP Sciences
2010-01-01
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| Series: | International Journal for Simulation and Multidisciplinary Design Optimization |
| Subjects: | |
| Online Access: | https://www.ijsmdo.org/articles/smdo/pdf/2010/01/smdo2010007.pdf |
| _version_ | 1819117112891801600 |
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| author | Karama M. Rabier F. |
| author_facet | Karama M. Rabier F. |
| author_sort | Karama M. |
| collection | DOAJ |
| description | This paper presents the modelling of some high power IGBT (Insulated Gate Bipolar Transistor) performances. These IGBT are essential components of the power converter in railway applications. Modelling methodology used in this study is design of experiments (DOE). The number of test in this kind of investigation is related with the number of factors. It is important before modelling to measure the effect of factors and interactions to suppress no significant factors and consequently, reduce the size of the DOE. In this paper we identify the significant elements among four factors related to converter design (Lcom, Lge) and driver (ton, Rgoff). Screening study on this factors show that only Lcom, Rgoff and to determine overvoltage and only Rgoff and ton determine communication speed. Significant interactions are also identified. Lots of articles discuss about high power IGBT. This one gets onto IGBT behaviour with an experimental way. |
| first_indexed | 2024-12-22T05:27:49Z |
| format | Article |
| id | doaj.art-1f1404fac62944e6acdf480fdb215b5b |
| institution | Directory Open Access Journal |
| issn | 1779-627X 1779-6288 |
| language | English |
| last_indexed | 2024-12-22T05:27:49Z |
| publishDate | 2010-01-01 |
| publisher | EDP Sciences |
| record_format | Article |
| series | International Journal for Simulation and Multidisciplinary Design Optimization |
| spelling | doaj.art-1f1404fac62944e6acdf480fdb215b5b2022-12-21T18:37:32ZengEDP SciencesInternational Journal for Simulation and Multidisciplinary Design Optimization1779-627X1779-62882010-01-0141495510.1051/ijsmdo/2010007smdo2010007Screening study on high power IGBTKarama M.Rabier F.This paper presents the modelling of some high power IGBT (Insulated Gate Bipolar Transistor) performances. These IGBT are essential components of the power converter in railway applications. Modelling methodology used in this study is design of experiments (DOE). The number of test in this kind of investigation is related with the number of factors. It is important before modelling to measure the effect of factors and interactions to suppress no significant factors and consequently, reduce the size of the DOE. In this paper we identify the significant elements among four factors related to converter design (Lcom, Lge) and driver (ton, Rgoff). Screening study on this factors show that only Lcom, Rgoff and to determine overvoltage and only Rgoff and ton determine communication speed. Significant interactions are also identified. Lots of articles discuss about high power IGBT. This one gets onto IGBT behaviour with an experimental way.https://www.ijsmdo.org/articles/smdo/pdf/2010/01/smdo2010007.pdfigbtscreeningbipolar technology |
| spellingShingle | Karama M. Rabier F. Screening study on high power IGBT International Journal for Simulation and Multidisciplinary Design Optimization igbt screening bipolar technology |
| title | Screening study on high power IGBT |
| title_full | Screening study on high power IGBT |
| title_fullStr | Screening study on high power IGBT |
| title_full_unstemmed | Screening study on high power IGBT |
| title_short | Screening study on high power IGBT |
| title_sort | screening study on high power igbt |
| topic | igbt screening bipolar technology |
| url | https://www.ijsmdo.org/articles/smdo/pdf/2010/01/smdo2010007.pdf |
| work_keys_str_mv | AT karamam screeningstudyonhighpowerigbt AT rabierf screeningstudyonhighpowerigbt |