Self-Powered Sb<sub>2</sub>Te<sub>3</sub>/MoS<sub>2</sub> Heterojunction Broadband Photodetector on Flexible Substrate from Visible to Near Infrared
Van der Waals (vdWs) heterostructures, assembled by stacking of two-dimensional (2D) crystal layers, have emerged as a promising new material system for high-performance optoelectronic applications, such as thin film transistors, photodetectors, and light-emitters. In this study, we showcase an inno...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-06-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/13/13/1973 |
| _version_ | 1827734682533363712 |
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| author | Hao Wang Chaobo Dong Yaliang Gui Jiachi Ye Salem Altaleb Martin Thomaschewski Behrouz Movahhed Nouri Chandraman Patil Hamed Dalir Volker J. Sorger |
| author_facet | Hao Wang Chaobo Dong Yaliang Gui Jiachi Ye Salem Altaleb Martin Thomaschewski Behrouz Movahhed Nouri Chandraman Patil Hamed Dalir Volker J. Sorger |
| author_sort | Hao Wang |
| collection | DOAJ |
| description | Van der Waals (vdWs) heterostructures, assembled by stacking of two-dimensional (2D) crystal layers, have emerged as a promising new material system for high-performance optoelectronic applications, such as thin film transistors, photodetectors, and light-emitters. In this study, we showcase an innovative device that leverages strain-tuning capabilities, utilizing a MoS<sub>2</sub>/Sb<sub>2</sub>Te<sub>3</sub> vdWs p-n heterojunction architecture designed explicitly for photodetection across the visible to near-infrared spectrum. These heterojunction devices provide ultra-low dark currents as small as 4.3 pA, a robust photoresponsivity of 0.12 A W<sup>−1</sup>, and reasonable response times characterized by rising and falling durations of 0.197 s and 0.138 s, respectively. These novel devices exhibit remarkable tunability under the application of compressive strain up to 0.3%. The introduction of strain at the heterojunction interface influences the bandgap of the materials, resulting in a significant alteration of the heterojunction’s band structure. This subsequently shifts the detector’s optical absorption properties. The proposed strategy of strain-induced engineering of the stacked 2D crystal materials allows the tuning of the electronic and optical properties of the device. Such a technique enables fine-tuning of the optoelectronic performance of vdWs devices, paving the way for tunable high-performance, low-power consumption applications. This development also holds significant potential for applications in wearable sensor technology and flexible electro-optic circuits. |
| first_indexed | 2024-03-11T01:32:58Z |
| format | Article |
| id | doaj.art-1f26db65bd834a49982e6d837747adb6 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-11T01:32:58Z |
| publishDate | 2023-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-1f26db65bd834a49982e6d837747adb62023-11-18T17:12:06ZengMDPI AGNanomaterials2079-49912023-06-011313197310.3390/nano13131973Self-Powered Sb<sub>2</sub>Te<sub>3</sub>/MoS<sub>2</sub> Heterojunction Broadband Photodetector on Flexible Substrate from Visible to Near InfraredHao Wang0Chaobo Dong1Yaliang Gui2Jiachi Ye3Salem Altaleb4Martin Thomaschewski5Behrouz Movahhed Nouri6Chandraman Patil7Hamed Dalir8Volker J. Sorger9Optelligence LLC, 10703 Marlboro Pike, Upper Marlboro, MD 20772, USADepartment of Electrical and Computer Engineering, The George Washington University, 800 22nd Street, Washington, DC 20052, USADepartment of Electrical and Computer Engineering, The George Washington University, 800 22nd Street, Washington, DC 20052, USADepartment of Electrical & Computer Engineering, University of Florida, 968 Center Drive 216 Larsen Hall, Gainesville, FL 32611, USADepartment of Electrical & Computer Engineering, University of Florida, 968 Center Drive 216 Larsen Hall, Gainesville, FL 32611, USADepartment of Electrical and Computer Engineering, The George Washington University, 800 22nd Street, Washington, DC 20052, USAOptelligence LLC, 10703 Marlboro Pike, Upper Marlboro, MD 20772, USADepartment of Electrical and Computer Engineering, The George Washington University, 800 22nd Street, Washington, DC 20052, USADepartment of Electrical & Computer Engineering, University of Florida, 968 Center Drive 216 Larsen Hall, Gainesville, FL 32611, USAOptelligence LLC, 10703 Marlboro Pike, Upper Marlboro, MD 20772, USAVan der Waals (vdWs) heterostructures, assembled by stacking of two-dimensional (2D) crystal layers, have emerged as a promising new material system for high-performance optoelectronic applications, such as thin film transistors, photodetectors, and light-emitters. In this study, we showcase an innovative device that leverages strain-tuning capabilities, utilizing a MoS<sub>2</sub>/Sb<sub>2</sub>Te<sub>3</sub> vdWs p-n heterojunction architecture designed explicitly for photodetection across the visible to near-infrared spectrum. These heterojunction devices provide ultra-low dark currents as small as 4.3 pA, a robust photoresponsivity of 0.12 A W<sup>−1</sup>, and reasonable response times characterized by rising and falling durations of 0.197 s and 0.138 s, respectively. These novel devices exhibit remarkable tunability under the application of compressive strain up to 0.3%. The introduction of strain at the heterojunction interface influences the bandgap of the materials, resulting in a significant alteration of the heterojunction’s band structure. This subsequently shifts the detector’s optical absorption properties. The proposed strategy of strain-induced engineering of the stacked 2D crystal materials allows the tuning of the electronic and optical properties of the device. Such a technique enables fine-tuning of the optoelectronic performance of vdWs devices, paving the way for tunable high-performance, low-power consumption applications. This development also holds significant potential for applications in wearable sensor technology and flexible electro-optic circuits.https://www.mdpi.com/2079-4991/13/13/19732D materialsphotodetectorbroadbandself-poweredflexible substratephotonic integrated circuits |
| spellingShingle | Hao Wang Chaobo Dong Yaliang Gui Jiachi Ye Salem Altaleb Martin Thomaschewski Behrouz Movahhed Nouri Chandraman Patil Hamed Dalir Volker J. Sorger Self-Powered Sb<sub>2</sub>Te<sub>3</sub>/MoS<sub>2</sub> Heterojunction Broadband Photodetector on Flexible Substrate from Visible to Near Infrared Nanomaterials 2D materials photodetector broadband self-powered flexible substrate photonic integrated circuits |
| title | Self-Powered Sb<sub>2</sub>Te<sub>3</sub>/MoS<sub>2</sub> Heterojunction Broadband Photodetector on Flexible Substrate from Visible to Near Infrared |
| title_full | Self-Powered Sb<sub>2</sub>Te<sub>3</sub>/MoS<sub>2</sub> Heterojunction Broadband Photodetector on Flexible Substrate from Visible to Near Infrared |
| title_fullStr | Self-Powered Sb<sub>2</sub>Te<sub>3</sub>/MoS<sub>2</sub> Heterojunction Broadband Photodetector on Flexible Substrate from Visible to Near Infrared |
| title_full_unstemmed | Self-Powered Sb<sub>2</sub>Te<sub>3</sub>/MoS<sub>2</sub> Heterojunction Broadband Photodetector on Flexible Substrate from Visible to Near Infrared |
| title_short | Self-Powered Sb<sub>2</sub>Te<sub>3</sub>/MoS<sub>2</sub> Heterojunction Broadband Photodetector on Flexible Substrate from Visible to Near Infrared |
| title_sort | self powered sb sub 2 sub te sub 3 sub mos sub 2 sub heterojunction broadband photodetector on flexible substrate from visible to near infrared |
| topic | 2D materials photodetector broadband self-powered flexible substrate photonic integrated circuits |
| url | https://www.mdpi.com/2079-4991/13/13/1973 |
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