The kinetics of carbon pair formation in silicon prohibits reaching thermal equilibrium
Computational search for defect centers in semiconductors typically assumes that the defects realize the most thermodynamically stable configuration. Here the authors demonstrate, for a complex defect in silicon, that this is not always the case if the kinetics of defect formation is taken into acco...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2023-01-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-023-36090-2 |
| Summary: | Computational search for defect centers in semiconductors typically assumes that the defects realize the most thermodynamically stable configuration. Here the authors demonstrate, for a complex defect in silicon, that this is not always the case if the kinetics of defect formation is taken into account. |
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| ISSN: | 2041-1723 |