The kinetics of carbon pair formation in silicon prohibits reaching thermal equilibrium
Computational search for defect centers in semiconductors typically assumes that the defects realize the most thermodynamically stable configuration. Here the authors demonstrate, for a complex defect in silicon, that this is not always the case if the kinetics of defect formation is taken into acco...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2023-01-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-023-36090-2 |
| _version_ | 1811175730918195200 |
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| author | Peter Deák Péter Udvarhelyi Gergő Thiering Adam Gali |
| author_facet | Peter Deák Péter Udvarhelyi Gergő Thiering Adam Gali |
| author_sort | Peter Deák |
| collection | DOAJ |
| description | Computational search for defect centers in semiconductors typically assumes that the defects realize the most thermodynamically stable configuration. Here the authors demonstrate, for a complex defect in silicon, that this is not always the case if the kinetics of defect formation is taken into account. |
| first_indexed | 2024-04-10T19:41:39Z |
| format | Article |
| id | doaj.art-1f59ffa641894ff4a609df67144ae515 |
| institution | Directory Open Access Journal |
| issn | 2041-1723 |
| language | English |
| last_indexed | 2024-04-10T19:41:39Z |
| publishDate | 2023-01-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj.art-1f59ffa641894ff4a609df67144ae5152023-01-29T12:17:20ZengNature PortfolioNature Communications2041-17232023-01-011411610.1038/s41467-023-36090-2The kinetics of carbon pair formation in silicon prohibits reaching thermal equilibriumPeter Deák0Péter Udvarhelyi1Gergő Thiering2Adam Gali3Wigner Research Centre for PhysicsWigner Research Centre for PhysicsWigner Research Centre for PhysicsWigner Research Centre for PhysicsComputational search for defect centers in semiconductors typically assumes that the defects realize the most thermodynamically stable configuration. Here the authors demonstrate, for a complex defect in silicon, that this is not always the case if the kinetics of defect formation is taken into account.https://doi.org/10.1038/s41467-023-36090-2 |
| spellingShingle | Peter Deák Péter Udvarhelyi Gergő Thiering Adam Gali The kinetics of carbon pair formation in silicon prohibits reaching thermal equilibrium Nature Communications |
| title | The kinetics of carbon pair formation in silicon prohibits reaching thermal equilibrium |
| title_full | The kinetics of carbon pair formation in silicon prohibits reaching thermal equilibrium |
| title_fullStr | The kinetics of carbon pair formation in silicon prohibits reaching thermal equilibrium |
| title_full_unstemmed | The kinetics of carbon pair formation in silicon prohibits reaching thermal equilibrium |
| title_short | The kinetics of carbon pair formation in silicon prohibits reaching thermal equilibrium |
| title_sort | kinetics of carbon pair formation in silicon prohibits reaching thermal equilibrium |
| url | https://doi.org/10.1038/s41467-023-36090-2 |
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