High-performance junction-free field-effect transistor based on blue phosphorene
Abstract Two-dimensional semiconductors have great potential in high-performance electronic devices. However, the common way of contacting them with metals to inject charge carriers results in contact resistance. We propose a junction-free field-effect transistor consisting of semiconducting monolay...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2022-12-01
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| Series: | npj 2D Materials and Applications |
| Online Access: | https://doi.org/10.1038/s41699-022-00361-1 |
| Summary: | Abstract Two-dimensional semiconductors have great potential in high-performance electronic devices. However, the common way of contacting them with metals to inject charge carriers results in contact resistance. We propose a junction-free field-effect transistor consisting of semiconducting monolayer blue phosphorene as channel material (with high carrier mobility) and metallic bilayer blue phosphorene as electrodes. The junction-free design minimizes the contact resistance. Employing first-principles calculations along with the non-equilibrium Green’s function method, we demonstrate a high I on/I off ratio of up to 2.6 × 104 and a remarkable transconductance of up to 811 μS/μm. |
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| ISSN: | 2397-7132 |