High-performance junction-free field-effect transistor based on blue phosphorene
Abstract Two-dimensional semiconductors have great potential in high-performance electronic devices. However, the common way of contacting them with metals to inject charge carriers results in contact resistance. We propose a junction-free field-effect transistor consisting of semiconducting monolay...
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2022-12-01
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| Series: | npj 2D Materials and Applications |
| Online Access: | https://doi.org/10.1038/s41699-022-00361-1 |
| _version_ | 1811302168805769216 |
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| author | Shubham Tyagi Paresh C. Rout Udo Schwingenschlögl |
| author_facet | Shubham Tyagi Paresh C. Rout Udo Schwingenschlögl |
| author_sort | Shubham Tyagi |
| collection | DOAJ |
| description | Abstract Two-dimensional semiconductors have great potential in high-performance electronic devices. However, the common way of contacting them with metals to inject charge carriers results in contact resistance. We propose a junction-free field-effect transistor consisting of semiconducting monolayer blue phosphorene as channel material (with high carrier mobility) and metallic bilayer blue phosphorene as electrodes. The junction-free design minimizes the contact resistance. Employing first-principles calculations along with the non-equilibrium Green’s function method, we demonstrate a high I on/I off ratio of up to 2.6 × 104 and a remarkable transconductance of up to 811 μS/μm. |
| first_indexed | 2024-04-13T07:23:15Z |
| format | Article |
| id | doaj.art-1f6c9c9803ff4ecb9cfe735f33159155 |
| institution | Directory Open Access Journal |
| issn | 2397-7132 |
| language | English |
| last_indexed | 2024-04-13T07:23:15Z |
| publishDate | 2022-12-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | npj 2D Materials and Applications |
| spelling | doaj.art-1f6c9c9803ff4ecb9cfe735f331591552022-12-22T02:56:33ZengNature Portfolionpj 2D Materials and Applications2397-71322022-12-01611610.1038/s41699-022-00361-1High-performance junction-free field-effect transistor based on blue phosphoreneShubham Tyagi0Paresh C. Rout1Udo Schwingenschlögl2Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST)Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST)Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST)Abstract Two-dimensional semiconductors have great potential in high-performance electronic devices. However, the common way of contacting them with metals to inject charge carriers results in contact resistance. We propose a junction-free field-effect transistor consisting of semiconducting monolayer blue phosphorene as channel material (with high carrier mobility) and metallic bilayer blue phosphorene as electrodes. The junction-free design minimizes the contact resistance. Employing first-principles calculations along with the non-equilibrium Green’s function method, we demonstrate a high I on/I off ratio of up to 2.6 × 104 and a remarkable transconductance of up to 811 μS/μm.https://doi.org/10.1038/s41699-022-00361-1 |
| spellingShingle | Shubham Tyagi Paresh C. Rout Udo Schwingenschlögl High-performance junction-free field-effect transistor based on blue phosphorene npj 2D Materials and Applications |
| title | High-performance junction-free field-effect transistor based on blue phosphorene |
| title_full | High-performance junction-free field-effect transistor based on blue phosphorene |
| title_fullStr | High-performance junction-free field-effect transistor based on blue phosphorene |
| title_full_unstemmed | High-performance junction-free field-effect transistor based on blue phosphorene |
| title_short | High-performance junction-free field-effect transistor based on blue phosphorene |
| title_sort | high performance junction free field effect transistor based on blue phosphorene |
| url | https://doi.org/10.1038/s41699-022-00361-1 |
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