Green’s function-based defect identification in InAs-InAs1-xSbx strained layer superlattices
We have extended the recently developed approach that employs first-principles Hamiltonian, tight-binding Hamiltonian, and Green’s function methods to study native point defect states in InAs/InAs0.7Sb0.3 strained layer superlattices (SLS) latticed matched to GaSb. Our calculations predict a defect...
Main Authors: | S. Krishnamurthy, Zhi Gang Yu |
---|---|
Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2017-06-01
|
Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.4989564 |
Similar Items
-
Critical behavior of CrTe1-xSbx ferromagnet
by: M. Kh. Hamad, et al.
Published: (2018-10-01) -
GROWTH OF INAS/GASB STRAINED-LAYER SUPERLATTICES .2.
by: Booker, G, et al.
Published: (1995) -
GROWTH OF INAS/GASB STRAINED-LAYER SUPERLATTICES .1.
by: Booker, G, et al.
Published: (1994) -
Growth and characterization of GaAs1and#x2212;xSbx nanowires
by: Yuan, X, et al.
Published: (2012) -
Exploring thermoelectric materials for renewable energy applications: The case of highly mismatched alloys based on AlBi1-xSbx and InBi1-xSbx
by: Ul Haq, B., et al.
Published: (2018)