Optical properties of CuSe thin films - band gap determination
Copper selenide thin films of three different thicknesses have been prepared by vacuum evaporation method on a glass substrate at room temperature. The optical properties of the films were investigated by UV-VIS-NIR spectroscopy and photoluminescence spectroscopy. Surface morphology was inv...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
International Institute for the Science of Sintering, Beograd
2017-01-01
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| Series: | Science of Sintering |
| Subjects: | |
| Online Access: | http://www.doiserbia.nb.rs/img/doi/0350-820X/2017/0350-820X1702167P.pdf |
| Summary: | Copper selenide thin films of three different thicknesses have been prepared
by vacuum evaporation method on a glass substrate at room temperature. The
optical properties of the films were investigated by UV-VIS-NIR spectroscopy
and photoluminescence spectroscopy. Surface morphology was investigated by
field-emission scanning electron microscopy. Copper selenide exhibits both
direct and indirect transitions. The band gap for direct transition is found
to be ~2.7 eV and that for indirect transition it is ~1.70 eV.
Photoluminescence spectra of copper selenide thin films have also been
analyzed, which show emission peaks at 530, 550, and 760 nm. The latter
corresponds to indirect transition in investigated material. [Project of the
Serbian Ministry of Education, Science and Technological Development, Grant
no. III45003] |
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| ISSN: | 0350-820X 1820-7413 |