Highly Transparent ITO/HfO<sub>2</sub>/ITO Device for Visible-Light Sensing
Transparent visible-light sensors are of critical importance in invisible optoelectronic circuits as the interface between the optical and electrical domains. However, devices designed based on photocarrier generation for light sensing limit the transparency of the device in the visible region, as t...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2020-01-01
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| Series: | IEEE Access |
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| Online Access: | https://ieeexplore.ieee.org/document/9092993/ |
| _version_ | 1819173501469196288 |
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| author | Pranav Sairam Kalaga Dayanand Kumar Diing Shenp Ang Zviad Tsakadze |
| author_facet | Pranav Sairam Kalaga Dayanand Kumar Diing Shenp Ang Zviad Tsakadze |
| author_sort | Pranav Sairam Kalaga |
| collection | DOAJ |
| description | Transparent visible-light sensors are of critical importance in invisible optoelectronic circuits as the interface between the optical and electrical domains. However, devices designed based on photocarrier generation for light sensing limit the transparency of the device in the visible region, as the optically active layer also passively absorbs light continuously. In this work, we present an all-transparent ITO/HfO<sub>2</sub>/ITO device with the wide bandgap HfO<sub>2</sub> functioning as the resistive switching and the light sensing element. Electrically switching the resistive state of the device to a low-resistance soft-breakdown state is demonstrated to cause the wide-bandgap visible-light blind HfO<sub>2</sub> to become photoresponsive. This allows us to optically functionalize the device for an optical response by electrical breakdown in the oxide and can be triggered on-demand. Apart from the on-demand optical response in the device, the inherent resistive switching properties of the HfO<sub>2</sub> device allow for integration of memory and optical sensing capabilities, presenting a novel phenomenon for optical sensing in invisible optoelectronics. |
| first_indexed | 2024-12-22T20:24:05Z |
| format | Article |
| id | doaj.art-1fa6bc2871b443fc956c35bf5a4cd761 |
| institution | Directory Open Access Journal |
| issn | 2169-3536 |
| language | English |
| last_indexed | 2024-12-22T20:24:05Z |
| publishDate | 2020-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj.art-1fa6bc2871b443fc956c35bf5a4cd7612022-12-21T18:13:46ZengIEEEIEEE Access2169-35362020-01-018916489165210.1109/ACCESS.2020.29943839092993Highly Transparent ITO/HfO<sub>2</sub>/ITO Device for Visible-Light SensingPranav Sairam Kalaga0https://orcid.org/0000-0003-4188-970XDayanand Kumar1Diing Shenp Ang2Zviad Tsakadze3School of Electrical and Electronics Engineering, Nanyang Technological University, SingaporeSchool of Electrical and Electronics Engineering, Nanyang Technological University, SingaporeSchool of Electrical and Electronics Engineering, Nanyang Technological University, SingaporeSchool of Electrical and Electronics Engineering, Nanyang Technological University, SingaporeTransparent visible-light sensors are of critical importance in invisible optoelectronic circuits as the interface between the optical and electrical domains. However, devices designed based on photocarrier generation for light sensing limit the transparency of the device in the visible region, as the optically active layer also passively absorbs light continuously. In this work, we present an all-transparent ITO/HfO<sub>2</sub>/ITO device with the wide bandgap HfO<sub>2</sub> functioning as the resistive switching and the light sensing element. Electrically switching the resistive state of the device to a low-resistance soft-breakdown state is demonstrated to cause the wide-bandgap visible-light blind HfO<sub>2</sub> to become photoresponsive. This allows us to optically functionalize the device for an optical response by electrical breakdown in the oxide and can be triggered on-demand. Apart from the on-demand optical response in the device, the inherent resistive switching properties of the HfO<sub>2</sub> device allow for integration of memory and optical sensing capabilities, presenting a novel phenomenon for optical sensing in invisible optoelectronics.https://ieeexplore.ieee.org/document/9092993/Non-volatile optical memoryphotosensorReRAMtransition metal oxidestransparent electronics |
| spellingShingle | Pranav Sairam Kalaga Dayanand Kumar Diing Shenp Ang Zviad Tsakadze Highly Transparent ITO/HfO<sub>2</sub>/ITO Device for Visible-Light Sensing IEEE Access Non-volatile optical memory photosensor ReRAM transition metal oxides transparent electronics |
| title | Highly Transparent ITO/HfO<sub>2</sub>/ITO Device for Visible-Light Sensing |
| title_full | Highly Transparent ITO/HfO<sub>2</sub>/ITO Device for Visible-Light Sensing |
| title_fullStr | Highly Transparent ITO/HfO<sub>2</sub>/ITO Device for Visible-Light Sensing |
| title_full_unstemmed | Highly Transparent ITO/HfO<sub>2</sub>/ITO Device for Visible-Light Sensing |
| title_short | Highly Transparent ITO/HfO<sub>2</sub>/ITO Device for Visible-Light Sensing |
| title_sort | highly transparent ito hfo sub 2 sub ito device for visible light sensing |
| topic | Non-volatile optical memory photosensor ReRAM transition metal oxides transparent electronics |
| url | https://ieeexplore.ieee.org/document/9092993/ |
| work_keys_str_mv | AT pranavsairamkalaga highlytransparentitohfosub2subitodeviceforvisiblelightsensing AT dayanandkumar highlytransparentitohfosub2subitodeviceforvisiblelightsensing AT diingshenpang highlytransparentitohfosub2subitodeviceforvisiblelightsensing AT zviadtsakadze highlytransparentitohfosub2subitodeviceforvisiblelightsensing |