Terahertz light-emitting graphene-channel transistor toward single-mode lasing
A distributed feedback dual-gate graphene-channel field-effect transistor (DFB-DG-GFET) was fabricated as a current-injection terahertz (THz) light-emitting laser transistor. We observed a broadband emission in a 1–7.6-THz range with a maximum radiation power of ~10 μW as well as a single-mode emiss...
| Main Authors: | , , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
De Gruyter
2018-03-01
|
| Series: | Nanophotonics |
| Subjects: | |
| Online Access: | https://doi.org/10.1515/nanoph-2017-0106 |
| _version_ | 1819121863731707904 |
|---|---|
| author | Yadav Deepika Tamamushi Gen Watanabe Takayuki Mitsushio Junki Tobah Youssef Sugawara Kenta Dubinov Alexander A. Satou Akira Ryzhii Maxim Ryzhii Victor Otsuji Taiichi |
| author_facet | Yadav Deepika Tamamushi Gen Watanabe Takayuki Mitsushio Junki Tobah Youssef Sugawara Kenta Dubinov Alexander A. Satou Akira Ryzhii Maxim Ryzhii Victor Otsuji Taiichi |
| author_sort | Yadav Deepika |
| collection | DOAJ |
| description | A distributed feedback dual-gate graphene-channel field-effect transistor (DFB-DG-GFET) was fabricated as a current-injection terahertz (THz) light-emitting laser transistor. We observed a broadband emission in a 1–7.6-THz range with a maximum radiation power of ~10 μW as well as a single-mode emission at 5.2 THz with a radiation power of ~0.1 μW both at 100 K when the carrier injection stays between the lower cutoff and upper cutoff threshold levels. The device also exhibited peculiar nonlinear threshold-like behavior with respect to the current-injection level. The LED-like broadband emission is interpreted as an amplified spontaneous THz emission being transcended to a single-mode lasing. Design constraints on waveguide structures for better THz photon field confinement with higher gain overlapping as well as DFB cavity structures with higher Q factors are also addressed towards intense, single-mode continuous wave THz lasing at room temperature. |
| first_indexed | 2024-12-22T06:43:19Z |
| format | Article |
| id | doaj.art-1fac7edf5d4744de85b9e82f4db1b8ba |
| institution | Directory Open Access Journal |
| issn | 2192-8606 2192-8614 |
| language | English |
| last_indexed | 2024-12-22T06:43:19Z |
| publishDate | 2018-03-01 |
| publisher | De Gruyter |
| record_format | Article |
| series | Nanophotonics |
| spelling | doaj.art-1fac7edf5d4744de85b9e82f4db1b8ba2022-12-21T18:35:22ZengDe GruyterNanophotonics2192-86062192-86142018-03-017474175210.1515/nanoph-2017-0106nanoph-2017-0106Terahertz light-emitting graphene-channel transistor toward single-mode lasingYadav Deepika0Tamamushi Gen1Watanabe Takayuki2Mitsushio Junki3Tobah Youssef4Sugawara Kenta5Dubinov Alexander A.6Satou Akira7Ryzhii Maxim8Ryzhii Victor9Otsuji Taiichi10Research Institute of Electrical Communication, Tohoku University, Sendai 9808577, JapanResearch Institute of Electrical Communication, Tohoku University, Sendai 9808577, JapanResearch Institute of Electrical Communication, Tohoku University, Sendai 9808577, JapanResearch Institute of Electrical Communication, Tohoku University, Sendai 9808577, JapanDepartment of Electrical and Computer Engineering, University of Texas at Austin, Austin 78712, TX, USAResearch Institute of Electrical Communication, Tohoku University, Sendai 9808577, JapanInstitute for Physics of Microstructures, Russian Academy of Sciences, Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod 603950, RussiaResearch Institute of Electrical Communication, Tohoku University, Sendai 9808577, JapanDepartment of Computer Science and Engineering, University of Aizu, Aizu-Wakamatsu 965-8580, JapanResearch Institute of Electrical Communication, Tohoku University, Sendai 9808577, JapanResearch Institute of Electrical Communication, Tohoku University, Sendai 9808577, JapanA distributed feedback dual-gate graphene-channel field-effect transistor (DFB-DG-GFET) was fabricated as a current-injection terahertz (THz) light-emitting laser transistor. We observed a broadband emission in a 1–7.6-THz range with a maximum radiation power of ~10 μW as well as a single-mode emission at 5.2 THz with a radiation power of ~0.1 μW both at 100 K when the carrier injection stays between the lower cutoff and upper cutoff threshold levels. The device also exhibited peculiar nonlinear threshold-like behavior with respect to the current-injection level. The LED-like broadband emission is interpreted as an amplified spontaneous THz emission being transcended to a single-mode lasing. Design constraints on waveguide structures for better THz photon field confinement with higher gain overlapping as well as DFB cavity structures with higher Q factors are also addressed towards intense, single-mode continuous wave THz lasing at room temperature.https://doi.org/10.1515/nanoph-2017-0106graphenelasersfar infrared or terahertzpumpingcurrent injectiondistributed-feedbackoptoelectronics |
| spellingShingle | Yadav Deepika Tamamushi Gen Watanabe Takayuki Mitsushio Junki Tobah Youssef Sugawara Kenta Dubinov Alexander A. Satou Akira Ryzhii Maxim Ryzhii Victor Otsuji Taiichi Terahertz light-emitting graphene-channel transistor toward single-mode lasing Nanophotonics graphene lasers far infrared or terahertz pumping current injection distributed-feedback optoelectronics |
| title | Terahertz light-emitting graphene-channel transistor toward single-mode lasing |
| title_full | Terahertz light-emitting graphene-channel transistor toward single-mode lasing |
| title_fullStr | Terahertz light-emitting graphene-channel transistor toward single-mode lasing |
| title_full_unstemmed | Terahertz light-emitting graphene-channel transistor toward single-mode lasing |
| title_short | Terahertz light-emitting graphene-channel transistor toward single-mode lasing |
| title_sort | terahertz light emitting graphene channel transistor toward single mode lasing |
| topic | graphene lasers far infrared or terahertz pumping current injection distributed-feedback optoelectronics |
| url | https://doi.org/10.1515/nanoph-2017-0106 |
| work_keys_str_mv | AT yadavdeepika terahertzlightemittinggraphenechanneltransistortowardsinglemodelasing AT tamamushigen terahertzlightemittinggraphenechanneltransistortowardsinglemodelasing AT watanabetakayuki terahertzlightemittinggraphenechanneltransistortowardsinglemodelasing AT mitsushiojunki terahertzlightemittinggraphenechanneltransistortowardsinglemodelasing AT tobahyoussef terahertzlightemittinggraphenechanneltransistortowardsinglemodelasing AT sugawarakenta terahertzlightemittinggraphenechanneltransistortowardsinglemodelasing AT dubinovalexandera terahertzlightemittinggraphenechanneltransistortowardsinglemodelasing AT satouakira terahertzlightemittinggraphenechanneltransistortowardsinglemodelasing AT ryzhiimaxim terahertzlightemittinggraphenechanneltransistortowardsinglemodelasing AT ryzhiivictor terahertzlightemittinggraphenechanneltransistortowardsinglemodelasing AT otsujitaiichi terahertzlightemittinggraphenechanneltransistortowardsinglemodelasing |