Stress Engineering for Drive Current Enhancement in Silicon Carbide (SiC) Power MOSFETs
The poor interface quality of the Silicon Carbide/oxide (SiC/SiO<sub>2</sub>) interface severely degrades the electron surface channel mobility in SiC-based power devices. Based on transfer characteristic simulations (with a deck calibrated to experimental data), this work predicts impro...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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IEEE
2021-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9551271/ |
| _version_ | 1818824240710811648 |
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| author | Suvendu Nayak Saurabh Lodha Swaroop Ganguly |
| author_facet | Suvendu Nayak Saurabh Lodha Swaroop Ganguly |
| author_sort | Suvendu Nayak |
| collection | DOAJ |
| description | The poor interface quality of the Silicon Carbide/oxide (SiC/SiO<sub>2</sub>) interface severely degrades the electron surface channel mobility in SiC-based power devices. Based on transfer characteristic simulations (with a deck calibrated to experimental data), this work predicts improved mobility with stress engineering, a well-established technique for performance enhancement in low power silicon (Si) transistor technology. Process simulation of Si and SiC-based devices with Silicon Nitride (Si<sub>3</sub>N<sub>4</sub>) stressor layer has been carried out to estimate the stress generated in the channel. SiC D-MOSFET we have also computed the effect of varying stress magnitude, direction, and position in the device. |
| first_indexed | 2024-12-18T23:52:44Z |
| format | Article |
| id | doaj.art-1fd8bee01805414192ccd54564bb09a6 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-18T23:52:44Z |
| publishDate | 2021-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-1fd8bee01805414192ccd54564bb09a62022-12-21T20:46:50ZengIEEEIEEE Journal of the Electron Devices Society2168-67342021-01-01987688010.1109/JEDS.2021.31160989551271Stress Engineering for Drive Current Enhancement in Silicon Carbide (SiC) Power MOSFETsSuvendu Nayak0https://orcid.org/0000-0003-1640-7166Saurabh Lodha1https://orcid.org/0000-0002-0690-3169Swaroop Ganguly2Electrical Engineering Department, Indian Institute of Technology Bombay, Mumbai, IndiaElectrical Engineering Department, Indian Institute of Technology Bombay, Mumbai, IndiaElectrical Engineering Department, Indian Institute of Technology Bombay, Mumbai, IndiaThe poor interface quality of the Silicon Carbide/oxide (SiC/SiO<sub>2</sub>) interface severely degrades the electron surface channel mobility in SiC-based power devices. Based on transfer characteristic simulations (with a deck calibrated to experimental data), this work predicts improved mobility with stress engineering, a well-established technique for performance enhancement in low power silicon (Si) transistor technology. Process simulation of Si and SiC-based devices with Silicon Nitride (Si<sub>3</sub>N<sub>4</sub>) stressor layer has been carried out to estimate the stress generated in the channel. SiC D-MOSFET we have also computed the effect of varying stress magnitude, direction, and position in the device.https://ieeexplore.ieee.org/document/9551271/SiCMOSFETstressprocesspower |
| spellingShingle | Suvendu Nayak Saurabh Lodha Swaroop Ganguly Stress Engineering for Drive Current Enhancement in Silicon Carbide (SiC) Power MOSFETs IEEE Journal of the Electron Devices Society SiC MOSFET stress process power |
| title | Stress Engineering for Drive Current Enhancement in Silicon Carbide (SiC) Power MOSFETs |
| title_full | Stress Engineering for Drive Current Enhancement in Silicon Carbide (SiC) Power MOSFETs |
| title_fullStr | Stress Engineering for Drive Current Enhancement in Silicon Carbide (SiC) Power MOSFETs |
| title_full_unstemmed | Stress Engineering for Drive Current Enhancement in Silicon Carbide (SiC) Power MOSFETs |
| title_short | Stress Engineering for Drive Current Enhancement in Silicon Carbide (SiC) Power MOSFETs |
| title_sort | stress engineering for drive current enhancement in silicon carbide sic power mosfets |
| topic | SiC MOSFET stress process power |
| url | https://ieeexplore.ieee.org/document/9551271/ |
| work_keys_str_mv | AT suvendunayak stressengineeringfordrivecurrentenhancementinsiliconcarbidesicpowermosfets AT saurabhlodha stressengineeringfordrivecurrentenhancementinsiliconcarbidesicpowermosfets AT swaroopganguly stressengineeringfordrivecurrentenhancementinsiliconcarbidesicpowermosfets |