Two dimensional semiconducting materials for ultimately scaled transistors
Summary: Two dimensional (2D) semiconductors have been established as promising candidates to break through the short channel effect that existed in Si metal-oxide-semiconductor field-effect-transistor (MOSFET), owing to their unique atomically layered structure and dangling-bond-free surface. The l...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Elsevier
2022-10-01
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| Series: | iScience |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2589004222014328 |
| _version_ | 1811206355496730624 |
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| author | Tianyao Wei Zichao Han Xinyi Zhong Qingyu Xiao Tao Liu Du Xiang |
| author_facet | Tianyao Wei Zichao Han Xinyi Zhong Qingyu Xiao Tao Liu Du Xiang |
| author_sort | Tianyao Wei |
| collection | DOAJ |
| description | Summary: Two dimensional (2D) semiconductors have been established as promising candidates to break through the short channel effect that existed in Si metal-oxide-semiconductor field-effect-transistor (MOSFET), owing to their unique atomically layered structure and dangling-bond-free surface. The last decade has witnessed the significant progress in the size scaling of 2D transistors by various approaches, in which the physical gate length of the transistors has shrank from micrometer to sub-one nanometer with superior performance, illustrating their potential as a replacement technology for Si MOSFETs. Here, we review state-of-the-art techniques to achieve ultra-scaled 2D transistors with novel configurations through the scaling of channel, gate, and contact length. We provide comprehensive views of the merits and drawbacks of the ultra-scaled 2D transistors by summarizing the relevant fabrication processes with the corresponding critical parameters achieved. Finally, we identify the key opportunities and challenges for integrating ultra-scaled 2D transistors in the next-generation heterogeneous circuitry. |
| first_indexed | 2024-04-12T03:46:04Z |
| format | Article |
| id | doaj.art-1fe4ca942b5c4c86b6c2817984f3ebf1 |
| institution | Directory Open Access Journal |
| issn | 2589-0042 |
| language | English |
| last_indexed | 2024-04-12T03:46:04Z |
| publishDate | 2022-10-01 |
| publisher | Elsevier |
| record_format | Article |
| series | iScience |
| spelling | doaj.art-1fe4ca942b5c4c86b6c2817984f3ebf12022-12-22T03:49:07ZengElsevieriScience2589-00422022-10-012510105160Two dimensional semiconducting materials for ultimately scaled transistorsTianyao Wei0Zichao Han1Xinyi Zhong2Qingyu Xiao3Tao Liu4Du Xiang5Institute of Optoelectronics, Fudan University, Shanghai 200438, People’s Republic of China; Frontier Institute of Chip and System, Fudan University, Shanghai 200438, People’s Republic of ChinaInstitute of Optoelectronics, Fudan University, Shanghai 200438, People’s Republic of ChinaDepartment of Materials Science, Fudan University, Shanghai 200433, People’s Republic of ChinaDepartment of Materials Science, Fudan University, Shanghai 200433, People’s Republic of ChinaInstitute of Optoelectronics, Fudan University, Shanghai 200438, People’s Republic of China; Zhangjiang Fudan International Innovation Centre, Fudan University, Shanghai 200438, People’s Republic of China; Corresponding authorFrontier Institute of Chip and System, Fudan University, Shanghai 200438, People’s Republic of China; Zhangjiang Fudan International Innovation Centre, Fudan University, Shanghai 200438, People’s Republic of China; Shanghai Qi Zhi Institute, Shanghai 200232, People’s Republic of China; Corresponding authorSummary: Two dimensional (2D) semiconductors have been established as promising candidates to break through the short channel effect that existed in Si metal-oxide-semiconductor field-effect-transistor (MOSFET), owing to their unique atomically layered structure and dangling-bond-free surface. The last decade has witnessed the significant progress in the size scaling of 2D transistors by various approaches, in which the physical gate length of the transistors has shrank from micrometer to sub-one nanometer with superior performance, illustrating their potential as a replacement technology for Si MOSFETs. Here, we review state-of-the-art techniques to achieve ultra-scaled 2D transistors with novel configurations through the scaling of channel, gate, and contact length. We provide comprehensive views of the merits and drawbacks of the ultra-scaled 2D transistors by summarizing the relevant fabrication processes with the corresponding critical parameters achieved. Finally, we identify the key opportunities and challenges for integrating ultra-scaled 2D transistors in the next-generation heterogeneous circuitry.http://www.sciencedirect.com/science/article/pii/S2589004222014328Electrical engineeringNanomaterialsDevices |
| spellingShingle | Tianyao Wei Zichao Han Xinyi Zhong Qingyu Xiao Tao Liu Du Xiang Two dimensional semiconducting materials for ultimately scaled transistors iScience Electrical engineering Nanomaterials Devices |
| title | Two dimensional semiconducting materials for ultimately scaled transistors |
| title_full | Two dimensional semiconducting materials for ultimately scaled transistors |
| title_fullStr | Two dimensional semiconducting materials for ultimately scaled transistors |
| title_full_unstemmed | Two dimensional semiconducting materials for ultimately scaled transistors |
| title_short | Two dimensional semiconducting materials for ultimately scaled transistors |
| title_sort | two dimensional semiconducting materials for ultimately scaled transistors |
| topic | Electrical engineering Nanomaterials Devices |
| url | http://www.sciencedirect.com/science/article/pii/S2589004222014328 |
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